IRFB3206PbFIRFS3206PbFIRFSL3206PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous RectificationDVDSS60Vin SMPSRDS(on) typ.2.4ml Uninterruptible Power Supply max. 3.0ml High Speed Power Switchingl Hard Switched and High Frequency CircuitsGID (Silicon Limited) 210A ID (Package Limited)120A Benefits Sl Improved Gate, Avalanche and DynamicD

IRFB3206PbFIRFS3206PbFIRFSL3206PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous RectificationDVDSS60Vin SMPSRDS(on) typ.2.4ml Uninterruptible Power Supply max. 3.0ml High Speed Power Switchingl Hard Switched and High Frequency CircuitsGID (Silicon Limited) 210A ID (Package Limited)120A Benefits Sl Improved Gate, Avalanche and DynamicD

isc N-Channel MOSFET Transistor IRFS3206FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

AUIRFS3206 AUTOMOTIVE GRADE AUIRFSL3206 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.4m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175C Operating Temperature ID (Silicon Limited) 210A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tj

PD - 95708DIRFB3207PbFIRFS3207PbFIRFSL3207PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 75Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 3.6mG max. 4.5mBenefitsSID 170Al Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

IRFB3207ZPbFIRFS3207ZPbFIRFSL3207ZPbFHEXFET Power MOSFETApplicationsDVDSS 75Vl High Efficiency Synchronous Rectification inSMPS RDS(on) typ. 3.3ml Uninterruptible Power Supply max. 4.1mGl High Speed Power SwitchingID (Silicon Limited) 170Al Hard Switched and High Frequency CircuitsS ID (Package Limited) 120ABenefitsDDl Improved Gate, Avalanche and Dynamic

AUIRFS3207Z AUTOMOTIVE GRADE AUIRFSL3207Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 3.3m Ultra Low On-Resistance max. 4.1m 175C Operating Temperature Fast Switching ID (Silicon Limited) 170A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant

PD - 96893CIRFB3207IRFS3207IRFSL3207ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 75Vl High Speed Power Switching3.6mRDS(on) typ.l Hard Switched and High Frequency CircuitsGBenefits max. 4.5ml Worldwide Best RDS(on) in TO-220SID 180Al Improved Gate, Avalanche and Dynamic dV/dtRuggedn

IRFB3207ZPbFIRFS3207ZPbFIRFSL3207ZPbFHEXFET Power MOSFETApplicationsDVDSS 75Vl High Efficiency Synchronous Rectification inSMPS RDS(on) typ. 3.3ml Uninterruptible Power Supply max. 4.1mGl High Speed Power SwitchingID (Silicon Limited) 170Al Hard Switched and High Frequency CircuitsS ID (Package Limited) 120ABenefitsDDl Improved Gate, Avalanche and Dynamic

Isc N-Channel MOSFET Transistor IRFS3207FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Isc N-Channel MOSFET Transistor IRFS3207ZFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol