Справочник MOSFET. IRFS4620

 

IRFS4620 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFS4620
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 144 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 25 nC
   trⓘ - Время нарастания: 22.4 ns
   Cossⓘ - Выходная емкость: 125 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0775 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для IRFS4620

 

 

IRFS4620 Datasheet (PDF)

 ..1. Size:359K  international rectifier
irfs4620pbf irfsl4620pbf.pdf

IRFS4620
IRFS4620

PD -96203IRFS4620PbFIRFSL4620PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.63.7ml High Speed Power SwitchingG max. 77.5ml Hard Switched and High Frequency CircuitsID 24ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Cap

 ..2. Size:359K  infineon
irfs4620pbf irfsl4620pbf.pdf

IRFS4620
IRFS4620

PD -96203IRFS4620PbFIRFSL4620PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.63.7ml High Speed Power SwitchingG max. 77.5ml Hard Switched and High Frequency CircuitsID 24ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Cap

 ..3. Size:257K  inchange semiconductor
irfs4620.pdf

IRFS4620
IRFS4620

Isc N-Channel MOSFET Transistor IRFS4620FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 8.1. Size:340K  international rectifier
auirfs4610trl.pdf

IRFS4620
IRFS4620

PD - 96325AUTOMOTIVE GRADEAUIRFB4610AUIRFS4610Features HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceV(BR)DSS100V Enhanced dV/dT and dI/dT capabilityRDS(on) typ.11m 175C Operating Temperature Fast Switching max. 14mG Repetitive Avalanche Allowed up to TjmaxID73A Lead-Free, RoHS Compliant S Automotive Qualified *DDescripti

 8.2. Size:365K  international rectifier
irfs4615pbf irfsl4615pbf.pdf

IRFS4620
IRFS4620

PD -96202IRFS4615PbFIRFSL4615PbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.34.5ml High Speed Power SwitchingG max. 42ml Hard Switched and High Frequency CircuitsID 33ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Capac

 8.3. Size:399K  international rectifier
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

IRFS4620
IRFS4620

PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 8.4. Size:231K  fairchild semi
irfs460.pdf

IRFS4620
IRFS4620

IRFS460FEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.25 Rugged Gate Oxide Technology Lower Input CapacitanceID = 12.4 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 500V Lower RDS(ON): 0.197 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

 8.5. Size:365K  infineon
irfs4615pbf irfsl4615pbf.pdf

IRFS4620
IRFS4620

PD -96202IRFS4615PbFIRFSL4615PbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.34.5ml High Speed Power SwitchingG max. 42ml Hard Switched and High Frequency CircuitsID 33ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Capac

 8.6. Size:717K  infineon
auirfb4610 auirfs4610.pdf

IRFS4620
IRFS4620

AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Enhanced dV/dT and dI/dT capability 175C Operating Temperature max. 14m Fast Switching ID 73A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

 8.7. Size:399K  infineon
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

IRFS4620
IRFS4620

PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 8.8. Size:381K  infineon
irfb4610 irfs4610 irfsl4610.pdf

IRFS4620
IRFS4620

PD - 96906BIRFB4610IRFS4610IRFSL4610ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11m:RDS(on) typ.l Hard Switched and High Frequency CircuitsGmax. 14m:Benefitsl Improved Gate, Avalanche and Dynamic dV/dtID 73ASRuggednessl Fully Characterized Capacita

 8.9. Size:258K  inchange semiconductor
irfs4610.pdf

IRFS4620
IRFS4620

Isc N-Channel MOSFET Transistor IRFS4610FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 8.10. Size:257K  inchange semiconductor
irfs4615.pdf

IRFS4620
IRFS4620

Isc N-Channel MOSFET Transistor IRFS4615FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

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