Справочник MOSFET. IRFSL4620

 

IRFSL4620 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFSL4620
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 144 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 25 nC
   trⓘ - Время нарастания: 22.4 ns
   Cossⓘ - Выходная емкость: 125 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0775 Ohm
   Тип корпуса: TO262

 Аналог (замена) для IRFSL4620

 

 

IRFSL4620 Datasheet (PDF)

 ..1. Size:359K  international rectifier
irfs4620pbf irfsl4620pbf.pdf

IRFSL4620
IRFSL4620

PD -96203IRFS4620PbFIRFSL4620PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.63.7ml High Speed Power SwitchingG max. 77.5ml Hard Switched and High Frequency CircuitsID 24ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Cap

 ..2. Size:359K  infineon
irfs4620pbf irfsl4620pbf.pdf

IRFSL4620
IRFSL4620

PD -96203IRFS4620PbFIRFSL4620PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.63.7ml High Speed Power SwitchingG max. 77.5ml Hard Switched and High Frequency CircuitsID 24ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Cap

 ..3. Size:224K  inchange semiconductor
irfsl4620.pdf

IRFSL4620
IRFSL4620

Isc N-Channel MOSFET Transistor IRFSL4620FEATURESWith To-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 7.1. Size:365K  international rectifier
irfs4615pbf irfsl4615pbf.pdf

IRFSL4620
IRFSL4620

PD -96202IRFS4615PbFIRFSL4615PbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.34.5ml High Speed Power SwitchingG max. 42ml Hard Switched and High Frequency CircuitsID 33ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Capac

 7.2. Size:399K  international rectifier
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

IRFSL4620
IRFSL4620

PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 7.3. Size:365K  infineon
irfs4615pbf irfsl4615pbf.pdf

IRFSL4620
IRFSL4620

PD -96202IRFS4615PbFIRFSL4615PbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.34.5ml High Speed Power SwitchingG max. 42ml Hard Switched and High Frequency CircuitsID 33ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Capac

 7.4. Size:399K  infineon
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

IRFSL4620
IRFSL4620

PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 7.5. Size:381K  infineon
irfb4610 irfs4610 irfsl4610.pdf

IRFSL4620
IRFSL4620

PD - 96906BIRFB4610IRFS4610IRFSL4610ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11m:RDS(on) typ.l Hard Switched and High Frequency CircuitsGmax. 14m:Benefitsl Improved Gate, Avalanche and Dynamic dV/dtID 73ASRuggednessl Fully Characterized Capacita

 7.6. Size:286K  inchange semiconductor
irfsl4610.pdf

IRFSL4620
IRFSL4620

isc N-Channel MOSFET Transistor IRFSL4610FEATURESStatic drain-source on-resistance:RDS(on) 13.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 7.7. Size:255K  inchange semiconductor
irfsl4615.pdf

IRFSL4620
IRFSL4620

Isc N-Channel MOSFET Transistor IRFS4615FEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150

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