IRLR024Z - описание и поиск аналогов

PD - 95773B IRLR024ZPbF IRLU024ZPbF HEXFET Power MOSFET Features n Logic Level D n Advanced Process Technology VDSS = 55V n Ultra Low On-Resistance n 175 C Operating Temperature RDS(on) = 58m n Fast Switching G n Repetitive Avalanche Allowed up to Tjmax n Lead-Free ID = 16A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve ext

AUIRLR024Z AUTOMOTIVE GRADE AUIRLU024Z Features HEXFET Power MOSFET Logic Level VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ. 46m 175 C Operating Temperature Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D De

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175 C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com

PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Surface Mount (IRLR024N) VDSS = 55V l Straight Lead (IRLU024N) l Advanced Process Technology RDS(on) = 0.065 G l Fast Switching l Fully Avalanche Rated ID = 17A S l Lead-Free Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techni

PD- 96091 IRLR024PbF IRLU024PbF HEXFET Power MOSFET Lead-Free Description Absolute Maximum Ratings 08/01/06 Document Number 91322 www.vishay.com 1 IRLR/U024PbF Document Number 91322 www.vishay.com 2 IRLR/U024PbF Document Number 91322 www.vishay.com 3 IRLR/U024PbF Document Number 91322 www.vishay.com 4 IRLR/U024PbF Document Number 91322 www.vishay.com 5 IRLR

PD- 91363E IRLR024N IRLU024N HEXFET Power MOSFET Logic-Level Gate Drive D Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process Technology RDS(on) = 0.065 G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowes

PD- 96348 AUTOMOTIVE GRADE AUIRLR024N AUIRLU024N Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance D Logic-Level Gate Drive V(BR)DSS 55V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.065 Fast Switching G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qual

IRLR/U024A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.075 Rugged Gate Oxide Technology Lower Input Capacitance ID = 15 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.061 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ra

IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Surface Mount (IRLR024/SiHLR024) RDS(on) ( )VGS = 5.0 V 0.10 RoHS* Straight Lead (IRLU024/SiHLU024) Qg (Max.) (nC) 18 COMPLIANT Available in Tape and Reel Qgs (nC) 4.5 Qgd (nC) 12 Logic-Level Gate Drive Configuration Single

60V N-Channel Power MOSFET DESCRIPTION The IRLR024NTR uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS VDS = 60V,ID= 30A Schematic diagram RDS(ON)

isc N-Channel MOSFET Transistor IRLR024N, IIRLR024N FEATURES Static drain-source on-resistance RDS(on) 65m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-