Справочник MOSFET. IRLR8256

 

IRLR8256 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLR8256
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 63 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.35 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 81 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 10 nC
   trⓘ - Время нарастания: 46 ns
   Cossⓘ - Выходная емкость: 453 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0057 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для IRLR8256

 

 

IRLR8256 Datasheet (PDF)

 ..1. Size:284K  international rectifier
 irlu8256pbf irlr8256pbf.pdf

IRLR8256 IRLR8256

PD - 96208AIRLR8256PbFIRLU8256PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC25V 5.7m 10nC Converters with Synchronous Rectification for Telecom and Industrial UseDBenefitsl Very Low RDS(on) at 4.5V VGSS Sl Ultra-Low Gate ImpedanceDG Gl Fully Char

 ..2. Size:284K  infineon
 irlr8256pbf.pdf

IRLR8256 IRLR8256

PD - 96208AIRLR8256PbFIRLU8256PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC25V 5.7m 10nC Converters with Synchronous Rectification for Telecom and Industrial UseDBenefitsl Very Low RDS(on) at 4.5V VGSS Sl Ultra-Low Gate ImpedanceDG Gl Fully Char

 ..3. Size:242K  inchange semiconductor
 irlr8256.pdf

IRLR8256 IRLR8256

isc N-Channel MOSFET Transistor IRLR8256, IIRLR8256FEATURESStatic drain-source on-resistance:RDS(on)5.7mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh efficiencyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 25 VDSSV Gat

 7.1. Size:363K  international rectifier
 irlu8259pbf irlr8259pbf.pdf

IRLR8256 IRLR8256

PD - 97360IRLR8259PbFIRLU8259PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl High Frequency Isolated DC-DC25V 8.7m 6.8nC Converters with Synchronous Rectification for Telecom and Industrial UseDBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully

 7.2. Size:361K  infineon
 irlr8259pbf irlu8259pbf.pdf

IRLR8256 IRLR8256

PD - 97360IRLR8259PbFIRLU8259PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl High Frequency Isolated DC-DC25V 8.7m 6.8nC Converters with Synchronous Rectification for Telecom and Industrial UseDBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully

 7.3. Size:242K  inchange semiconductor
 irlr8259.pdf

IRLR8256 IRLR8256

isc N-Channel MOSFET Transistor IRLR8259, IIRLR8259FEATURESStatic drain-source on-resistance:RDS(on)8.7mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

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