IRLS3036 - аналоги, параметры транзистора - Справочник транзисторов

IRLS3036 технические параметры

..1. Size:355K international rectifier
irls3036pbf irlsl3036pbf.pdf pdf_icon

PD -97358 IRLS3036PbF IRLSL3036PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.9m l Uninterruptible Power Supply max. 2.4m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) S 195A Benefits l Optimized for Logic

..2. Size:258K inchange semiconductor
irls3036.pdf pdf_icon

Isc N-Channel MOSFET Transistor IRLS3036 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

0.1. Size:307K international rectifier
irls3036-7ppbf.pdf pdf_icon

PD -97148A IRLS3036-7PPbF HEXFET Power MOSFET Applications D VDSS 60V l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.5m l Uninterruptible Power Supply max. 1.9m l High Speed Power Switching G ID (Silicon Limited) 300A c l Hard Switched and High Frequency Circuits ID (Package Limited) 240A S Benefits l Optimized for Logic Level

0.2. Size:288K international rectifier
auirls3036.pdf pdf_icon

AUTOMOTIVE GRADE AUIRLS3036 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.9m Logic Level Gate Drive Dynamic dv/dt Rating max. 2.4m G 175 C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant