Справочник MOSFET. IRLS3036

 

IRLS3036 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLS3036
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 380 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 270 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 91 nC
   trⓘ - Время нарастания: 220 ns
   Cossⓘ - Выходная емкость: 1020 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для IRLS3036

 

 

IRLS3036 Datasheet (PDF)

 ..1. Size:355K  international rectifier
 irls3036pbf irlsl3036pbf.pdf

IRLS3036 IRLS3036

PD -97358IRLS3036PbFIRLSL3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic

 ..2. Size:355K  infineon
 irls3036pbf irlsl3036pbf.pdf

IRLS3036 IRLS3036

PD -97358IRLS3036PbFIRLSL3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic

 ..3. Size:258K  inchange semiconductor
 irls3036.pdf

IRLS3036 IRLS3036

Isc N-Channel MOSFET Transistor IRLS3036FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 0.1. Size:307K  international rectifier
 irls3036-7ppbf.pdf

IRLS3036 IRLS3036

PD -97148AIRLS3036-7PPbFHEXFET Power MOSFETApplicationsDVDSS 60Vl DC Motor Drivel High Efficiency Synchronous Rectification in SMPS RDS(on) typ.1.5m:l Uninterruptible Power Supplymax. 1.9m:l High Speed Power SwitchingGID (Silicon Limited)300Acl Hard Switched and High Frequency CircuitsID (Package Limited)240ASBenefitsl Optimized for Logic Level

 0.2. Size:288K  international rectifier
 auirls3036.pdf

IRLS3036 IRLS3036

AUTOMOTIVE GRADEAUIRLS3036HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS 60V Ultra Low On-ResistanceRDS(on) typ.1.9m Logic Level Gate Drive Dynamic dv/dt Ratingmax. 2.4mG 175C Operating TemperatureID (Silicon Limited) 270A Fast SwitchingID (Package Limited)S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

 0.3. Size:688K  infineon
 auirls3036-7p.pdf

IRLS3036 IRLS3036

AUTOMOTIVE GRADE AUIRLS3036-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.9m 175C Operating Temperature ID (Silicon Limited) 300A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T

 0.4. Size:307K  infineon
 irls3036-7ppbf.pdf

IRLS3036 IRLS3036

PD -97148AIRLS3036-7PPbFHEXFET Power MOSFETApplicationsDVDSS 60Vl DC Motor Drivel High Efficiency Synchronous Rectification in SMPS RDS(on) typ.1.5m:l Uninterruptible Power Supplymax. 1.9m:l High Speed Power SwitchingGID (Silicon Limited)300Acl Hard Switched and High Frequency CircuitsID (Package Limited)240ASBenefitsl Optimized for Logic Level

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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