IRLS3036-7P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRLS3036-7P
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 380 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 300 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 110 nC
trⓘ - Время нарастания: 540 ns
Cossⓘ - Выходная емкость: 1025 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0019 Ohm
Тип корпуса: D2PAK
Аналог (замена) для IRLS3036-7P
IRLS3036-7P Datasheet (PDF)
irls3036-7ppbf.pdf
PD -97148AIRLS3036-7PPbFHEXFET Power MOSFETApplicationsDVDSS 60Vl DC Motor Drivel High Efficiency Synchronous Rectification in SMPS RDS(on) typ.1.5m:l Uninterruptible Power Supplymax. 1.9m:l High Speed Power SwitchingGID (Silicon Limited)300Acl Hard Switched and High Frequency CircuitsID (Package Limited)240ASBenefitsl Optimized for Logic Level
irls3036-7ppbf.pdf
PD -97148AIRLS3036-7PPbFHEXFET Power MOSFETApplicationsDVDSS 60Vl DC Motor Drivel High Efficiency Synchronous Rectification in SMPS RDS(on) typ.1.5m:l Uninterruptible Power Supplymax. 1.9m:l High Speed Power SwitchingGID (Silicon Limited)300Acl Hard Switched and High Frequency CircuitsID (Package Limited)240ASBenefitsl Optimized for Logic Level
auirls3036-7p.pdf
AUTOMOTIVE GRADE AUIRLS3036-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.9m 175C Operating Temperature ID (Silicon Limited) 300A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T
irls3036pbf irlsl3036pbf.pdf
PD -97358IRLS3036PbFIRLSL3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic
auirls3036.pdf
AUTOMOTIVE GRADEAUIRLS3036HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS 60V Ultra Low On-ResistanceRDS(on) typ.1.9m Logic Level Gate Drive Dynamic dv/dt Ratingmax. 2.4mG 175C Operating TemperatureID (Silicon Limited) 270A Fast SwitchingID (Package Limited)S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
irls3036pbf irlsl3036pbf.pdf
PD -97358IRLS3036PbFIRLSL3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic
irls3036.pdf
Isc N-Channel MOSFET Transistor IRLS3036FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918