Справочник MOSFET. IRLZ44ZL

 

IRLZ44ZL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLZ44ZL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 80 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 51 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 160 ns
   Cossⓘ - Выходная емкость: 230 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0135 Ohm
   Тип корпуса: TO262

 Аналог (замена) для IRLZ44ZL

 

 

IRLZ44ZL Datasheet (PDF)

 ..1. Size:381K  international rectifier
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IRLZ44ZL
IRLZ44ZL

PD - 95539AIRLZ44ZPbFIRLZ44ZSPbFIRLZ44ZLPbFFeatures Logic Level HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 13.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 51ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achi

 ..2. Size:381K  infineon
irlz44zpbf irlz44zspbf irlz44zlpbf.pdf

IRLZ44ZL
IRLZ44ZL

PD - 95539AIRLZ44ZPbFIRLZ44ZSPbFIRLZ44ZLPbFFeatures Logic Level HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 13.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 51ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achi

 7.1. Size:215K  infineon
auirlz44z.pdf

IRLZ44ZL
IRLZ44ZL

PD - 97682AUTOMOTIVE GRADEAUIRLZ44ZFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS55V 175C Operating Temperature Fast SwitchingRDS(on) typ.11mG Repetitive Avalanche Allowed up to max. 13.5mTjmaxS Lead-Free, RoHS CompliantID 51A Automotive Qualified *DescriptionDSpecifically

 7.2. Size:257K  inchange semiconductor
irlz44zs.pdf

IRLZ44ZL
IRLZ44ZL

Isc N-Channel MOSFET Transistor IRLZ44ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 7.3. Size:251K  inchange semiconductor
irlz44z.pdf

IRLZ44ZL
IRLZ44ZL

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLZ44ZIIRLZ44ZFEATURESStatic drain-source on-resistance:RDS(on) 13.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

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