AUIRF2805S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AUIRF2805S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 200 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 135 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 150 nC
trⓘ - Время нарастания: 120 ns
Cossⓘ - Выходная емкость: 1190 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0047 Ohm
Тип корпуса: TO263
Аналог (замена) для AUIRF2805S
AUIRF2805S Datasheet (PDF)
auirf2805l auirf2805s.pdf
PD - 96383AAUTOMOTIVE GRADEAUIRF2805SAUIRF2805LHEXFET Power MOSFETFeaturesD Advanced Planar TechnologyV(BR)DSS55V Low On-Resistance Dynamic dV/dT RatingRDS(on) max.4.7m 175C Operating TemperatureG Fast Switching Fully Avalanche RatedS ID 135A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DescriptionSp
auirf2805.pdf
PD - 97690AAUTOMOTIVE GRADEAUIRF2805Featuresl Advanced Planar TechnologyHEXFET Power MOSFETl Low On-Resistancel 175C Operating TemperatureDV(BR)DSS55Vl Fast SwitchingRDS(on) typ.3.9ml Fully Avalanche Ratedmax 4.7ml Repetitive Avalanche AllowedGup to TjmaxID (Silicon Limited)175Al Lead-Free, RoHS CompliantSID (Package Limited)75Al Autom
auirf2804wl.pdf
PD - 97739AUTOMOTIVE GRADEAUIRF2804WLHEXFET Power MOSFETFeaturesDV(BR)DSSl Advanced Process Technology 40Vl Ultra Low On-ResistanceRDS(on) max.1.8ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited)295Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240Al Lead-Free, RoHS Compliantl Automotive Qualified *Description
auirf2804strr.pdf
AUTOMOTIVE GRADE PD -96290AAUIRF2804AUIRF2804SAUIRF2804LFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceV(BR)DSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.5m l Fast Switchingl Repetitive Avalanche Allowed up to Tjmax max. 2.0m Gl Lead-Free, RoHS CompliantID (Silicon Limited) 270A l Automotive Qualified *SID
auirf2804wl.pdf
PD - 97739AUTOMOTIVE GRADEAUIRF2804WLHEXFET Power MOSFETFeaturesDV(BR)DSSl Advanced Process Technology 40Vl Ultra Low On-ResistanceRDS(on) max.1.8ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited)295Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240Al Lead-Free, RoHS Compliantl Automotive Qualified *Description
auirf2804 auirf2804s auirf2804l.pdf
AUIRF2804 AUIRF2804S AUTOMOTIVE GRADE AUIRF2804L Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.5m Ultra Low On-Resistance max. 2.0m 175C Operating Temperature ID (Silicon Limited) 270A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant Aut
auirf2807.pdf
PD - 96384AAUTOMOTIVE GRADEAUIRF2807HEXFET Power MOSFETFeaturesV(BR)DSS75Vl Advanced Planar Technology Dl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.13ml 175C Operating Temperaturel Fast SwitchingGID(Silicon Limited) 82Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up to TjmaxSID (Package Limited) 75Al Lead-Free, RoHS Compliantl Au
auirf2804s-7p.pdf
AUIRF2804S-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 1.6m Fast Switching ID (Silicon Limited) 320A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 240A Automotive Qualified * Desc
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SWF7N65M | HMS15N60F
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918