AUIRFR2407 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AUIRFR2407
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 110 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 42 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 74 nC
trⓘ - Время нарастания: 90 ns
Cossⓘ - Выходная емкость: 340 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm
Тип корпуса: DPAK
Аналог (замена) для AUIRFR2407
AUIRFR2407 Datasheet (PDF)
auirfr2407.pdf
AUTOMOTIVE GRADE AUIRFR2407 HEXFET Power MOSFET Features Advanced Planar Technology VDSS 75V Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 21.8m 175C Operating Temperature max. 26m Fast Switching Fully Avalanche Rated ID (Silicon Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualifi
auirfr2405.pdf
PD - 97688AAUTOMOTIVE GRADEAUIRFR2405Features HEXFET Power MOSFETl Advanced Planar TechnologyDV(BR)DSS55V Dynamic dV/dT RatingRDS(on) typ.l Low On-Resistance 11.8ml 175C Operating Temperaturemax 16mGl Fast SwitchingID (Silicon Limited)56Al Fully Avalanche RatedSl Repetitive Avalanche AllowedID (Package Limited)30Aup to Tjmaxl Lead-Free, R
auirfr2905ztr.pdf
PD - 96320AUTOMOTIVE GRADEAUIRFR2905ZHEXFET Power MOSFETV(BR)DSS55VFeaturesDl Advanced Process TechnologyRDS(on) typ.11.1ml Ultra Low On-Resistancel 175C Operating Temperature max. 14.5mGl Fast SwitchingID (Silicon Limited) 59A l Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS CompliantID (Package Limited) 42A l Automotive Qualified *
auirfr2607ztr.pdf
PD - 96323AUTOMOTIVE MOSFETAUIRFR2607ZHEXFET Power MOSFETFeaturesV(BR)DSS75VDl Advanced Process TechnologyRDS(on) typ.l Ultra Low On-Resistance 17.6ml 175C Operating Temperaturemax. 22ml Fast Switching Gl Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 45A Sl Lead-Free, RoHS CompliantID (Package Limited) 42A l Automotive Qualified *
auirfr2307ztr.pdf
PD - 97546AUTOMOTIVE GRADEAUIRFR2307ZFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS 75V 175C Operating TemperatureRDS(on) max.16m Fast Switching Repetitive Avalanche Allowed up to Tjmax GID (Silicon Limited) 53A Lead-Free, RoHS CompliantSID (Package Limited) 42A Automotive Qualified *Desc
auirfr2905z.pdf
AUTOMOTIVE GRADE AUIRFR2905Z Features VDSS 55V Advanced Process Technology RDS(on) typ. 11.1m Ultra Low On-Resistance 175C Operating Temperature max. 14.5m Fast Switching ID (Silicon Limited) 59A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * D S Des
auirfr2607z.pdf
AUTOMOTIVE GRADE AUIRFR2607Z Features VDSS 75V Advanced Process Technology RDS(on) typ. 17.6m Ultra Low On-Resistance 175C Operating Temperature max. 22m Fast Switching ID (Silicon Limited) 45A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * D S Descr
auirfr2307z.pdf
AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 75V 175C Operating Temperature RDS(on) max. 16m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 53A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descri
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918