Справочник MOSFET. AUIRFR6215

 

AUIRFR6215 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AUIRFR6215
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 36 ns
   Cossⓘ - Выходная емкость: 220 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.295 Ohm
   Тип корпуса: DPAK
     - подбор MOSFET транзистора по параметрам

 

AUIRFR6215 Datasheet (PDF)

 ..1. Size:483K  infineon
auirfr6215.pdfpdf_icon

AUIRFR6215

AUTOMOTIVE GRADE AUIRFR6215 Features VDSS -150V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.295 P-Channel ID -13A Dynamic dv/dt Rating 175C Operating Temperature Fast Switching D Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S Automotive Qualified * G D

 0.1. Size:265K  international rectifier
auirfr6215tr.pdfpdf_icon

AUIRFR6215

PD-96302AAUTOMOTIVE GRADEAUIRFR6215HEXFET Power MOSFETFeatures P-ChannelDV(BR)DSS -150V Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature RDS(on) max.0.295G Fast Switching Fully Avalanche RatedSID -13A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed fo

 8.1. Size:485K  international rectifier
auirfr3607 auirfu3607.pdfpdf_icon

AUIRFR6215

AUTOMOTIVE GRADEAUIRFR3607AUIRFU3607FeaturesAdvanced Process TechnologyHEXFET Power MOSFETUltra Low On-ResistanceD175C Operating TemperatureVDSS 75VFast SwitchingRDS(on) typ. 7.34mRepetitive Avalanche Allowed up to TjmaxLead-Free, RoHS Compliant max. 9.0mAutomotive Qualified *GID (Silicon Limited) 80AS ID (Package Limited) 56ADescriptionSpecifically des

 8.2. Size:317K  international rectifier
auirfr4104tr.pdfpdf_icon

AUIRFR6215

PD - 97452AAUIRFR4104AUTOMOTIVE GRADEAUIRFU4104HEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceV(BR)DSS 40V 175C Operating TemperatureRDS(on) max.5.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)119A Lead-Free, RoHS CompliantSID (Package Limited) 42A Automotive Q

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NTMFS5C410NT3G | SIHG47N60S | IPP16CN10LG | HGI110N08AL | AP02N70EI-HF | FDZ1416NZ | 9N95

 

 
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