Аналог (замена) для AUIRFS4310

 

 

AUIRFS4310 Datasheet (PDF)

1.1. auirfs4310trl.pdf Size:334K _international_rectifier

PD - 96324 AUTOMOTIVE GRADE AUIRFS4310 AUIRFSL4310 Features HEXFET® Power MOSFET l Advanced Process Technology V(BR)DSS l Ultra Low On-Resistance 100V D l 175°C Operating Temperature RDS(on) typ. 5.6mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 7.0mΩ G l Lead-Free, RoHS Compliant ID (Silicon Limited) 130A l Automotive Qualified * S ID (Package L

3.1. auirfs4610trl.pdf Size:340K _international_rectifier

PD - 96325 AUTOMOTIVE GRADE AUIRFB4610 AUIRFS4610 Features HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V(BR)DSS 100V Enhanced dV/dT and dI/dT capability RDS(on) typ. 11m 175°C Operating Temperature Fast Switching max. 14m G Repetitive Avalanche Allowed up to Tjmax ID 73A Lead-Free, RoHS Compliant S Automotive Qualified * D Descripti

 4.1. auirfs8403 auirfsl8403.pdf Size:277K _international_rectifier

AUIRFS8403 AUTOMOTIVE GRADE AUIRFSL8403 HEXFET® Power MOSFET Features l Advanced Process Technology D VDSS 40V l New Ultra Low On-Resistance l 175°C Operating Temperature RDS(on) typ. 2.6mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 3.3mΩ l Lead-Free, RoHS Compliant Automotive Qualified * S ID (Silicon Limited) 123A Description Specifically desi

4.2. auirfs8408-7p.pdf Size:275K _international_rectifier

AUIRFS8408-7P AUTOMOTIVE GRADE Features HEXFET® Power MOSFET l Advanced Process Technology 40V VDSS l New Ultra Low On-Resistance 0.70m RDS(on) typ. Ω l 175°C Operating Temperature l Fast Switching max. 1.0m Ω l Repetitive Avalanche Allowed up to Tjmax 397A ID (Silicon Limited) l Lead-Free, RoHS Compliant 240A ID (Package Limited) l Automotive Qualified * Description

 4.3. auirfb8407 auirfs8407 auirfsl8407.pdf Size:340K _international_rectifier

AUIRFB8407 AUTOMOTIVE GRADE AUIRFS8407 AUIRFSL8407 Features HEXFET® Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V D l 175°C Operating Temperature RDS(on) typ. 1.4m l Fast Switching Ω l Repetitive Avalanche Allowed up to Tjmax (SMD version) max. 1.8m Ω l Lead-Free, RoHS Compliant G 250A ID (Silicon Limited) Automotive Qualified * S

4.4. auirfsl4115.pdf Size:285K _international_rectifier

AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET® Power MOSFET Features D VDSS 150V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 10.3mΩ l 175°C Operating Temperature l Fast Switching G max. 12.1mΩ l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant ID 99A l Automotive Qualified * S D Description D Specifically designed for A

 4.5. auirfs8405 auirfsl8405.pdf Size:351K _international_rectifier

AUIRFS8405 AUTOMOTIVE GRADE AUIRFSL8405 Features HEXFET® Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175°C Operating Temperature RDS(on) typ.1.9mΩ l Fast Switching max. 2.3mΩ l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant G ID (Silicon Limited) 193A l Automotive Qualified * ID (Package Limited) 120A S De

4.6. auirfs6535 auirfsl6535.pdf Size:266K _international_rectifier

AUTOMOTIVE GRADE AUIRFS6535 AUIRFSL6535 Features HEXFET® Power MOSFET ● Advanced Process Technology D ● Low On-Resistance V(BR)DSS 300V ● 175°C Operating Temperature RDS(on) typ. 148m ● Fast Switching G max. 185m ● Repetitive Avalanche Allowed up to Tjmax S ID 19A ● Lead-Free, RoHS Compliant ● Automotive Qualified * Description D Specifically designed

4.7. auirfs8409-7p.pdf Size:277K _international_rectifier

AUIRFS8409-7P AUTOMOTIVE GRADE Features HEXFET® Power MOSFET l Advanced Process Technology 40V VDSS l New Ultra Low On-Resistance 0.55m RDS(on) typ. Ω l 175°C Operating Temperature max. 0.75m Ω l Fast Switching l Repetitive Avalanche Allowed up to Tjmax 522A ID (Silicon Limited) l Lead-Free, RoHS Compliant 240A ID (Package Limited) l Automotive Qualified * Description

4.8. auirfs8408 auirfsl8408.pdf Size:291K _international_rectifier

AUIRFS8408 AUTOMOTIVE GRADE AUIRFSL8408 Features HEXFET® Power MOSFET l Advanced Process Technology VDSS 40V l New Ultra Low On-Resistance l 175°C Operating Temperature RDS(on) typ. 1.3m Ω l Fast Switching max. 1.6m Ω l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 317A l Lead-Free, RoHS Compliant l Automotive Qualified * ID (Package Limited) 195A Descri

4.9. auirfs8407-7p.pdf Size:220K _international_rectifier

AUTOMOTIVE GRADE AUIRFS8407-7P Features HEXFET® Power MOSFET  Advanced Process Technology D  New Ultra Low On-Resistance VDSS 40V  175°C Operating Temperature RDS(on) typ.1.0mΩ  Fast Switching  Repetitive Avalanche Allowed up to Tjmax max. 1.3mΩ  Lead-Free, RoHS Compliant G ID (Silicon Limited) 306A  Automotive Qualified * Description ID (Package L

4.10. auirfb8409 auirfs8409 auirfsl8409.pdf Size:398K _international_rectifier

AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET® Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175°C Operating Temperature RDS(on) (SMD) typ. 0.97mΩ l Fast Switching max. 1.2mΩ l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li

     

 

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Обновления

MOSFET: IPP45N04S4L-08 | IPI45N04S4L-08 | IPP12CNE8NG | IPI12CNE8NG | IPD12CNE8NG | IPP08CNE8NG | IPI08CNE8NG | IPI06CN10NG | IPP054NE8NG | IPI05CNE8NG | IPP050N06NG | SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F |