IRF7700G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7700G
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 8.6 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 880 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
Тип корпуса: TSSOP8
IRF7700G Datasheet (PDF)
irf7700gpbf.pdf
PD - 96155AIRF7700GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET-20V 0.015@VGS = -4.5V -8.6Al Very Small SOIC Package0.024@VGS = -2.5V -7.3Al Low Profile (
irf7700.pdf
PD - 93894AIRF7700HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET-20V 0.015@VGS = -4.5V -8.6A Very Small SOIC Package0.024@VGS = -2.5V -7.3A Low Profile (
irf7701.pdf
PD - 93940IRF7701HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET0.011@VGS = -4.5V -10A Very Small SOIC Package-12V 0.015@VGS = -2.5V -8.5A Low Profile (
irf7705gpbf.pdf
PD- 96142AIRF7705GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max (mW) IDl Very Small SOIC Package-30V 18 @VGS = -10V -8.0Al Low Profile (
irf7705pbf.pdf
PD-96022AIRF7705PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 18 @VGS = -10V -8.0Al Very Small SOIC Package 30 @VGS = -4.5V -6.0Al Low Profile (
irf7704.pdf
PD- 94160IRF7704HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET-40V 46@VGS = -10V -4.6A Very Small SOIC Package74@VGS = -4.5V -3.7A Low Profile (
irf7705.pdf
PD - 94001AIRF7705HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET-30V 18 @VGS = -10V -8.0A Very Small SOIC Package 30 @VGS = -4.5V -6.0A Low Profile (
irf7702.pdf
PD - 93849CPROVISIONALIRF7702HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID -1.8V Rated0.014@VGS = -4.5V -8.0A P-Channel MOSFET-12V 0.019@VGS = -2.5V -7.0A Very Small SOIC Package0.027@VGS = -1.8V -5.8A Low Profile (
irf7703.pdf
PD - 94221 BIRF7703HEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 28@VGS = -10V -6.0Al Very Small SOIC Package45@VGS = -4.5V -4.8Al Low Profile (
irf7706gpbf.pdf
PD-96143AIRF7706GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package -30V 22m@VGS = -10V -7.0Al Low Profile (
irf7701gpbf.pdf
PD - 96146AIRF7701GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFET VDSS RDS(on) max IDl Very Small SOIC Package0.011@VGS = -4.5V -10Al Low Profile (
irf7707.pdf
PD -93996IRF7707HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -20V 22m@VGS = -4.5V -7.0A Very Small SOIC Package33m@VGS = -2.5V -6.0A Low Profile (
irf7702gpbf.pdf
PD- 96147IRF7702GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl -1.8V Rated0.014@VGS = -4.5V -8.0Al P-Channel MOSFET-12V 0.019@VGS = -2.5V -7.0Al Very Small SOIC Package0.027@VGS = -1.8V -5.8Al Low Profile (
irf7702pbf.pdf
PD-96027IRF7702PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl -1.8V Rated0.014@VGS = -4.5V -8.0Al P-Channel MOSFET-12V 0.019@VGS = -2.5V -7.0Al Very Small SOIC Package0.027@VGS = -1.8V -5.8Al Low Profile (
irf7703pbf.pdf
PD-96026AIRF7703PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 28@VGS = -10V -6.0Al Very Small SOIC Package45@VGS = -4.5V -4.8Al Low Profile (
irf7703gpbf.pdf
PD- 96148AIRF7703GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max (mW) IDl Very Small SOIC Package-40V 28@VGS = -10V -6.0Al Low Profile (
irf7704pbf.pdf
PD- 96025AIRF7704PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 46@VGS = -10V -4.6Al Very Small SOIC Package74@VGS = -4.5V -3.7Al Low Profile (
irf7706.pdf
PD -94003IRF7706HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -30V 22m@VGS = -10V -7.0A Very Small SOIC Package36m@VGS = -4.5V -5.6A Low Profile (
irf7706pbf.pdf
PD-96023AIRF7706PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -30V 22m@VGS = -10V -7.0Al Very Small SOIC Package36m@VGS = -4.5V -5.6Al Low Profile (
irf7704gpbf.pdf
PD-96149IRF7704GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 46@VGS = -10V -4.6Al Very Small SOIC Package74@VGS = -4.5V -3.7Al Low Profile (
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918