Справочник MOSFET. IRF9388

 

IRF9388 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF9388
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 57 ns
   Cossⓘ - Выходная емкость: 350 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0119 Ohm
   Тип корпуса: SO8

 Аналог (замена) для IRF9388

 

 

IRF9388 Datasheet (PDF)

 ..1. Size:306K  international rectifier
 irf9388pbf.pdf

IRF9388 IRF9388

PD - 97521IRF9388PbFHEXFET Power MOSFETVDS-30 VVGS max 25 VRDS(on) max 11.9 m(@VGS = -10V) ID -12 A(@TA = 25C)SO-8Applications Adaptor Input Switch for Notebook PCFeatures and BenefitsResulting BenefitsFeatures25V VGS max Direct Drive at High VGSIndustry-Standard SO8 Package Multi-Vendor CompatibilityEnvironmentally FriendlierRoHS Compliant

 ..2. Size:308K  infineon
 irf9388pbf.pdf

IRF9388 IRF9388

PD - 97521IRF9388PbFHEXFET Power MOSFETVDS-30 VVGS max 25 VRDS(on) max 11.9 m(@VGS = -10V) ID -12 A(@TA = 25C)SO-8Applications Adaptor Input Switch for Notebook PCFeatures and BenefitsResulting BenefitsFeatures25V VGS max Direct Drive at High VGSIndustry-Standard SO8 Package Multi-Vendor CompatibilityEnvironmentally FriendlierRoHS Compliant

 8.1. Size:244K  international rectifier
 irf9389.pdf

IRF9388 IRF9388

IRF9389PbFHEXFET Power MOSFETN-CH P-CHN-CHANNEL MOSFET1 8S1 D1VDS 30 -30 V2 7G1 D1RDS(on) max 27 64 m3 6S2 D2Qg (typical) 6.8 8.1 nC 4 5G2 D2P-CHANNEL MOSFETID Top ViewSO-86.8 -4.6 A(@TA = 25C)Applicationsl High and Low Side Switches for Inverterl High and Low Side Switches for Generic Half-BridgeFeatures BenefitsHigh and low-side MOSFETs i

 8.2. Size:266K  international rectifier
 irf9383mpbf.pdf

IRF9388 IRF9388

IRF9383MPbFDirectFET P-Channel Power MOSFET Typical values (unless otherwise specified)Applicationsl Isolation Switch for Input Power or Battery Application VDSS VGS RDS(on) RDS(on) l High Side Switch for Inverter Applications-30V max 20V max 2.3m@-10V 3.8m@-4.5VQg tot Qgd Qgs2 Qrr Qoss Vgs(th) Features and Benefits67nC 29nC 9.4nC 315nC 59nC -1.8Vl Environmental

 8.3. Size:244K  infineon
 irf9389pbf.pdf

IRF9388 IRF9388

IRF9389PbFHEXFET Power MOSFETN-CH P-CHN-CHANNEL MOSFET1 8S1 D1VDS 30 -30 V2 7G1 D1RDS(on) max 27 64 m3 6S2 D2Qg (typical) 6.8 8.1 nC 4 5G2 D2P-CHANNEL MOSFETID Top ViewSO-86.8 -4.6 A(@TA = 25C)Applicationsl High and Low Side Switches for Inverterl High and Low Side Switches for Generic Half-BridgeFeatures BenefitsHigh and low-side MOSFETs i

 8.4. Size:242K  infineon
 irf9383mpbf.pdf

IRF9388 IRF9388

IRF9383MPbFDirectFET P-Channel Power MOSFET Typical values (unless otherwise specified)Applicationsl Isolation Switch for Input Power or Battery Application VDSS VGS RDS(on) RDS(on) l High Side Switch for Inverter Applications-30V max 20V max 2.3m@-10V 3.8m@-4.5VQg tot Qgd Qgs2 Qrr Qoss Vgs(th) Features and Benefits67nC 29nC 9.4nC 315nC 59nC -1.8Vl Environmentaly

 8.5. Size:891K  cn vbsemi
 irf9389tr.pdf

IRF9388 IRF9388

IRF9389TRwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG

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