IRF7501 datasheet, аналоги, основные параметры
Наименование производителя: IRF7501 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 130 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
Тип корпуса: MICRO8
📄📄 Копировать
Аналог (замена) для IRF7501
- подборⓘ MOSFET транзистора по параметрам
IRF7501 даташит
..1. Size:143K international rectifier
irf7501.pdf 
PD - 91265H IRF7501 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ulrtra Low On-Resistance VDSS =20V 2 7 Dual N-Channel MOSFET G1 D1 Very Small SOIC Package 3 6 S2 D2 Low Profile (
8.1. Size:213K international rectifier
irf7507pbf.pdf 
PD - 95218 IRF7507PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET 1 8 l Ultra Low On-Resistance S1 D1 N-Ch P-Ch l Dual N and P Channel MOSFET 2 7 G1 D1 l Very Small SOIC Package 3 6 VDSS 20V -20V S2 D2 l Low Profile (
8.2. Size:217K international rectifier
irf7509.pdf 
PD - 91270J IRF7509 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET 1 8 Ultra Low On-Resistance S1 D1 N-Ch P-Ch Dual N and P Channel MOSFET 2 7 G1 D1 Very Small SOIC Package 3 6 VDSS 30V -30V S2 D2 Low Profile (
8.3. Size:115K international rectifier
irf7504.pdf 
PD - 9.1267G IRF7504 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 Dual P-Channel MOSFET VDSS = -20V 2 7 G1 D1 Very Small SOIC Package 3 6 S2 D2 Low Profile (
8.4. Size:216K international rectifier
irf7507.pdf 
PD - 91269I IRF7507 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET 1 8 Ultra Low On-Resistance S1 D1 N-Ch P-Ch Dual N and P Channel MOSFET 2 7 G1 D1 Very Small SOIC Package 3 6 VDSS 20V -20V S2 D2 Low Profile (
8.5. Size:1008K international rectifier
irf7503pbf.pdf 
PD- 95346 IRF7503PbF Lead-Free www.irf.com 1 02/22/05 IRF7503PbF 2 www.irf.com IRF7503PbF www.irf.com 3 IRF7503PbF 4 www.irf.com IRF7503PbF www.irf.com 5 IRF7503PbF 6 www.irf.com IRF7503PbF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS INCHES MILLIMETERS D DIM MIN MAX MIN MAX 3 - B - D D D D D1 D1 D2 D2 A .036 .044 0.91
8.6. Size:114K international rectifier
irf7503.pdf 
PD - 9.1266G IRF7503 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 Dual N-Channel MOSFET VDSS = 30V 2 7 G1 D1 Very Small SOIC Package 3 6 S2 Low Profile (
8.7. Size:210K international rectifier
irf7506pbf.pdf 
PD - 95696 IRF7506PbF Lead-Free www.irf.com 9/2/04 IRF7506PbF 2 www.irf.com IRF7506PbF www.irf.com 3 IRF7506PbF 4 www.irf.com IRF7506PbF www.irf.com 5 IRF7506PbF 6 www.irf.com IRF7506PbF Micro8 Package Outline LEAD ASSIGNMENTS INCHES MILLIMETERS DIM D MIN MAX MIN MAX 3 - B - D D D D D1 D1 D2 D2 A .036 .044 0.91 1.11 A1 .004 .008 0.10 0.20 8 7 6 5 8 7 6 5 B
8.8. Size:241K international rectifier
irf7509pbf.pdf 
PD - 95397 IRF7509PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET 1 8 l Ultra Low On-Resistance S1 D1 N-Ch P-Ch l Dual N and P Channel MOSFET 2 7 G1 D1 l Very Small SOIC Package 3 6 VDSS 30V -30V S2 D2 l Low Profile (
8.9. Size:1079K international rectifier
irf7504pbf.pdf 
PD- 95912 IRF7504PbF Lead-Free www.irf.com 1 2/22/05 IRF7504PbF 2 www.irf.com IRF7504PbF www.irf.com 3 IRF7504PbF 4 www.irf.com IRF7504PbF www.irf.com 5 IRF7504PbF 6 www.irf.com IRF7504PbF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS INCHES MILLIMETERS DIM D MIN MAX MIN MAX 3 - B - D D D D D1 D1 D2 D2 A .036 .044 0.91
8.10. Size:237K international rectifier
irf7509pbf-1.pdf 
IRF7509PbF-1 HEXFET Power MOSFET N-CH P-CH N-CHANNEL MOSFET 1 8 VDS 30 -30 V S1 D1 2 7 RDS(on) max G1 D1 0.11 0.2 (@V = 10V) GS 3 6 S2 D2 Qg (typical) 7.8 7.5 nC 4 5 G2 D2 ID 2.7 -2.0 A P-CHANNEL MOSFET (@T = 25 C) A Micro8 Top View Features Benefits Industry-standard pinout Micro-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount
8.11. Size:103K international rectifier
irf7506.pdf 
PD - 9.1268F IRF7506 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Very Small SOIC Package 3 6 S2 D2 Low Profile (
8.12. Size:942K samsung
irf750a.pdf 
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 15 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.254 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value
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