PD - 9.1238CIRF7301HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance1 8S1 D1 Dual N-Channel MosfetVDSS = 20V2 7G1 D1 Surface Mount3 6 Available in Tape & ReelS2 D2 Dynamic dv/dt Rating45G2 D2RDS(on) = 0.050 Fast SwitchingT op V iewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtec

PD - 95176IRF7301PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8l Dual N-Channel Mosfet S1 D1VDSS = 20Vl Surface Mount 2 7G1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5l Fast SwitchingG2 D2RDS(on) = 0.050l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced

IRF7301TRwww.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25

AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance 2 7VDSS 30V -30V G1 D1 Logic Level Gate Drive 3 6S2 D2 Dual N and P Channel MOSFET RDS(on) max. 0.05 0.1045G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top ViewID 4.7A -3.5A

AUTOMOTIVE GRADE AUIRF7304Q Features HEXFET Power MOSFET Advanced Planar Technology VDSS 1 8 Low On-Resistance S1 D1 -20V 2 7G1 D1 Dual P Channel MOSFET RDS(on) max. 0.0903 6S2 D2 Dynamic dv/dt Rating 4 5ID G2 D2-4.3A Logic Level 150C Operating Temperature Top View Fast Switching Lead-Free, RoHS Compliant

AUTOMOTIVE GRADE AUIRF7303Q VDSS Features 1 8S1 D1 30V Advanced Planar Technology 2 7G1 D1RDS(on) max. Dual N Channel MOSFET 3 6S2 D20.054 Low On-Resistance 5G2 D2ID Logic Level Gate Drive 5.3A Top View Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

PD - 96104IRF7304QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P Channel MOSFETVDSS = -20V2 7G1 D1l Surface Mountl Available in Tape & Reel3 6S2 D2l 150C Operating Temperature45G2 D2l Automotive [Q101] Qualified RDS(on) = 0.090l Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appl

PD-95114SMPS MOSFETIRF730AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 400V 1.0 5.5Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and D 2 TO-

PD - 96104IRF7304QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P Channel MOSFETVDSS = -20V2 7G1 D1l Surface Mountl Available in Tape & Reel3 6S2 D2l 150C Operating Temperature45G2 D2l Automotive [Q101] Qualified RDS(on) = 0.090l Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appl

IRF7304PbF-1HEXFET Power MOSFETVDS -20 V1 8S1 D1RDS(on) max 0.09 2 7(@V = -4.5V) G1 D1GSQg 22 nC3 6S2 D2ID 4 5-4.3 AG2 D2(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentall

PD - 95115IRF730SPbF Lead-Free3/16/04Document Number: 91048 www.vishay.com1IRF730SPbFDocument Number: 91048 www.vishay.com2IRF730SPbFDocument Number: 91048 www.vishay.com3IRF730SPbFDocument Number: 91048 www.vishay.com4IRF730SPbFDocument Number: 91048 www.vishay.com5IRF730SPbFDocument Number: 91048 www.vishay.com6IRF730SPbFD2Pak Package Outli

PD - 96105IRF7306QPbFHEXFET Power MOSFETl Advanced Process Technology1 8l Ultra Low On-ResistanceS1 D1VDSS = -30Vl Dual P Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Available in Tape & Reel4l 150C Operating Temperature 5G2 D2 RDS(on) = 0.10l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive applic

PD - 9.1239DIRF7303HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-Resistance D1S1VDSS = 30V Dual N-Channel Mosfet 2 7G1 D1 Surface Mount3 6S2 D2 Available in Tape & Reel4 5G2 D2RDS(on) = 0.050 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniq

PD - 96135AIRF7309QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceN-CHANNEL MOSFET1 8 N-Ch P-Chl Dual N and P Channel MOSFETS1 D1l Surface Mount2 7G1 D1l Available in Tape & ReelVDSS 30V -30V3 6l 150C Operating TemperatureS2 D2l Lead-Free45RDS(on) 0.050 0.10G2 D2P-CHANNEL MOSFETDescriptionTop ViewThese HEXF

PD - 9.1243BIRF7309PRELIMINARYHEXFET Power MOSFETGeneration V TechnologyN-CHANNEL MOSFETUltra Low On-Resistance1 8 N-Ch P-ChS1 D1Dual N and P Channel Mosfet2 7G1 D1Surface MountVDSS 30V -30VAvailable in Tape & Reel 3 6S2 D2Dynamic dv/dt Rating45G2 D2Fast SwitchingP-CHANNEL MOSFET RDS(on) 0.050 0.10Top ViewDescriptionFifth Generation HEXFET

PD-93772ASMPS MOSFETIRF730AS/LHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 400V 1.0 5.5A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 PakAvalanche

IRF7309TRPbF-1HEXFET Power MOSFETN-CH P-CH VVDS 30 -30 VRDS(on) max 0.05 0.10 (@V = 10V)GSQg (max) 25 25 nCID SO-84.0 -3.0 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Ind

PD - 94977IRF730PbF Lead-Free02/03/04Document Number: 91047 www.vishay.com1Downloaded from Elcodis.com electronic components distributor IRF730PbFDocument Number: 91047 www.vishay.com2Downloaded from Elcodis.com electronic components distributor IRF730PbFDocument Number: 91047 www.vishay.com3Downloaded from Elcodis.com electronic components distributor IRF730

PD - 96106IRF7307QPbFHEXFET Power MOSFETl Advanced Process TechnologyN-CHANNEL MOSFET1 8l Ultra Low On-Resistance S1 D1N-Ch P-Chl Dual N and P Channel MOSFET 2 7G1 D1l Surface Mount3 6S2 D2VDSS 20V -20Vl Available in Tape & Reel4 5G2 D2l 150C Operating TemperatureP-CHANNEL MOSFETl Automotive [Q101] QualifiedTop View RDS(on) 0.050 0.090l Lead-F

PD - 9.1241CIRF7306HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = -30V Dual P-Channel Mosfet 2 7G1 D1 Surface Mount3 6S2 D2 Available in Tape & Reel45RDS(on) = 0.10G2 D2 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techni

PD - 96086IRF7309IPbF Lead-FreeDescriptionwww.irf.com 107/07/06IRF7309IPbF2 www.irf.comIRF7309IPbFwww.irf.com 3IRF7309IPbF4 www.irf.comIRF7309IPbFwww.irf.com 5IRF7309IPbF6 www.irf.comIRF7309IPbFwww.irf.com 7IRF7309IPbF8 www.irf.comIRF7309IPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance

PD - 9.1240CIRF7304HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance1 8S1 D1 Dual P-Channel MosfetVDSS = -20V2 7G1 D1 Surface Mount3 6 Available in Tape & ReelS2 D2 Dynamic dv/dt Rating4 5G2 D2RDS(on) = 0.090 Fast SwitchingT op V iewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtec

PD - 9.1242BIRF7307HEXFET Power MOSFET Generation V TechnologyN -C HAN NEL M O SF ET1 8 Ultra Low On-ResistanceS1 D1N-Ch P-Ch Dual N and P Channel Mosfet 2 7G1 D1 Surface Mount3 6S2 D2 VDSS 20V -20V Available in Tape & Reel4 5G2 D2 Dynamic dv/dt RatingP-CH ANNEL MOSFET Fast SwitchingTop View RDS(on) 0.050 0.090DescriptionFifth Generation HEXFE

PD - 94976SMPS MOSFETIRF730APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 400V 1.0 5.5Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Avalanch

Philips Semiconductors Product specification PowerMOS transistor IRF730 Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V High thermal cycling performance Low thermal resistance ID = 7.2 AgRDS(ON) 1 sGENERAL DESCRIPTION PINNING SOT78 (TO220AB)N-channel, enhancement mode PIN DESCRIPTION

IRF730N-channel 400V - 0.75 - 5.5A TO-220PowermeshII Power MOSFETGeneral featuresType VDSS RDS(on) IDIRF730 400V

November 2001IRF730B/IRFS730B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

IRF730Bwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 1.0- Low Input Capacitance (Ciss)Qg max. (nC) 18- Reduced Capacitive Switching LossesQgs (nC) 3 - High Body Diode Ruggedness- Avalanche Energy Rated (UIS)Qgd (nC) 4 Opt

IRF730A, SiHF730AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 400AvailableRequirementRDS(on) ()VGS = 10 V 1.0RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 22 RuggednessQgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 9.3 Effecti

IRF730S, SiHF730SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400Definition Surface MountRDS(on) ()VGS = 10 V 1.0 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 5.7 Repetitive Avalanche RatedQgd (nC) 22 Fast Switching Ease of ParallelingConfiguration Sing

IRF730S, SiHF730SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400Definition Surface MountRDS(on) ()VGS = 10 V 1.0 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 5.7 Repetitive Avalanche RatedQgd (nC) 22 Fast Switching Ease of ParallelingConfiguration Sing

IRF730, SiHF730Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.7Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

IRF730A, SiHF730AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 400AvailableRequirementRDS(on) ()VGS = 10 V 1.0RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 22 RuggednessQgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 9.3 Effecti

IRF730AS, SiHF730AS, IRF730AL, SiHF730ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400DefinitionRDS(on) (Max.) ()VGS = 10 V 1.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 22 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 5.8RuggednessQgd (nC) 9.3 Fully Characteriz

PD - 95038IRF7304PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P-Channel MosfetVDSS = -20V2 7G1 D1l Surface Mount3 6l Available in Tape & ReelS2 D2l Dynamic dv/dt Rating45G2 D2RDS(on) = 0.090l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize adva

PD - 95177IRF7303PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8l Dual N-Channel MosfetS1 D1VDSS = 30Vl Surface Mount 2 7G1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5G2 D2RDS(on) = 0.050l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanc

AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance 2 7VDSS 30V -30V G1 D1 Logic Level Gate Drive 3 6S2 D2 Dual N and P Channel MOSFET RDS(on) max. 0.05 0.1045G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top ViewID 4.7A -3.5A

PD - 95178IRF7306PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel Dual P-Channel Mosfet 1 8S1 D1VDSS = -30Vl Surface Mount2 7G1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5l Fast SwitchingG2 D2 RDS(on) = 0.10l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advance

PD - 95179IRF7307PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceN-CHANNEL MOSFET1 8l Dual N and P Channel MosfetS1 D1N-Ch P-Chl Surface Mount 2 7G1 D1l Available in Tape & Reel3 6S2 D2VDSS 20V -20Vl Dynamic dv/dt Rating4 5G2 D2l Fast SwitchingP-CHANNEL MOSFETl Lead-FreeTop View RDS(on) 0.050 0.090DescriptionFifth G

IRF730, SiHF730Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.7Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

IRF7309TRPbF-1HEXFET Power MOSFETN-CH P-CH VVDS 30 -30 VRDS(on) max 0.05 0.10 (@V = 10V)GSQg (max) 25 25 nCID SO-84.0 -3.0 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Ind

Spec. No. : MOS200406HI-SINCERITYIssued Date : 2004.10.01Revised Date : 2005.04.22MICROELECTRONICS CORP.Page No. : 1/4HIRF730 Series Pin AssignmentHIRF730 / HIRF730FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThird Generation HEXFETs from international Rectifier provide thedesigner with the

IRF730RoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 400V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 5.5AGSDescriptionGTO-220(P)DAPEC MOSFET provide the power designer with the best combination of fastSswitching , lower on-resistance and reasonable cost.

IRF730 Rev.H Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi

SMD Type MOSFETN-Channel MOSFETIRF730S (KRF730S) Features VDS (V) =400V ID = 5.5 A (VGS = 10V) RDS(ON) 1 (VGS = 10V) Fast switching Low thermal resistancedgs Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 400V Gate-Source Voltage VGS 20 Tc = 25 5.5 Continuous Drain Current ID Tc

IRF7306QTRwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top V

IRF7306TRwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vi

IRF7309TRPBFwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at

IRF7304QTRwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top V

IRF7303TRwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

isc N-Channel MOSFET Transistor IRF730FIDESCRIPTIONDrain Current I =3.5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,

MOSFET INCHANGE IRF730 N-channel mosfet transistor Features With TO-220 package 1 2 3 Simple drive requirements Fast switching VDSS=400V; RDS(ON)1.0;ID=5.5A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVDSS Drain-source voltage (VGS=0) 400 VVGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25 5

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF730AFEATURESDrain Current I =5.5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch Mode Power SupplyUninterruptable Power SupplyHigh speed power swi