IRL6372 - описание и поиск аналогов

PD - 97622 IRL6372PbF HEXFET Power MOSFET VDS 30 V VGS 12 V RDS(on) max 17.9 m (@VGS = 4.5V) Qg (typical) 11 nC SO-8 ID 8.1 A (@TA = 25 C) Applications Battery operated DC motor inverter MOSFET System/Load Switch Charge and Discharge Switches for Battery Application Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package Mul

PD - 9.1254 IRL630S HEXFET Power MOSFET Surface Mount Available in Tape & Reel VDSS = 200V Dynamic dv/dt Rating Repetitive Avalanche Rated RDS(on) = 0.40 Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V 150 C Operating Temperature ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switc

PD- 95756 IRL630PbF Lead-Free 8/24/04 Document Number 91303 www.vishay.com 1 IRL630PbF Document Number 91303 www.vishay.com 2 IRL630PbF Document Number 91303 www.vishay.com 3 IRL630PbF Document Number 91303 www.vishay.com 4 IRL630PbF Document Number 91303 www.vishay.com 5 IRL630PbF Document Number 91303 www.vishay.com 6 IRL630PbF Document Number 91303 www.

PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 200V Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V RDS(on) = 0.40 150 C Operating Temperature Fast Switching Ease of paralleling ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching,

PD - 97617 IRL6342PbF HEXFET Power MOSFET VDS 30 V VGS 12 V RDS(on) max 14.6 m (@VGS = 4.5V) Qg (typical) 11 nC SO-8 ID 9.9 A (@TA = 25 C) Applications Battery operated DC motor inverter MOSFET System/Load Switch Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic-Level Gate Drive RDS(on) = 0.4 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.335 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 V Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5 V 0.40 RoHS* Logic Level Gate Drive COMPLIANT Qg (Max.) (nC) 40 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 5.5 150 C Operating Temperature Qgd (nC) 24 Fast Switching Configuration Sing

IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 5 V 0.40 Available in Tape and Reel Qg (Max.) (nC) 40 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 5.5 Logic-Level Gate Drive Qgd (nC) 24 RDS(on) Specified at VGS = 4 V a

IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 5 V 0.40 Available in Tape and Reel Qg (Max.) (nC) 40 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 5.5 Logic-Level Gate Drive Qgd (nC) 24 RDS(on) Specified at VGS = 4 V a

IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 V Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5 V 0.40 RoHS* Logic Level Gate Drive COMPLIANT Qg (Max.) (nC) 40 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 5.5 150 C Operating Temperature Qgd (nC) 24 Fast Switching Configuration Sing