IRF7103 - описание и поиск аналогов

PD -95037B IRF7103PbF HEXFET Power MOSFET l Adavanced Process Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual N-Channel MOSFET VDSS = 50V 2 7 G1 D1 l Surface Mount 3 6 l Available in Tape & Reel S2 D2 RDS(on) = 0.130 l Dynamic dv/dt Rating 4 5 G2 D2 l Fast Switching ID = 3.0A Top View l Lead-Free Description The SO-8 has been modified through a customized leadf

PD - 9.1095B IRF7103 HEXFET Power MOSFET Adavanced Process Technology 1 8 Ultra Low On-Resistance D1 S1 VDSS = 50V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 RDS(on) = 0.130 Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating ID = 3.0A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced p

PD - 93944C IRF7103Q AUTOMOTIVE MOSFET Typical Applications Anti-lock Braking Systems (ABS) HEXFET Power MOSFET Electronic Fuel Injection ) ) ) ) Power Doors, Windows & Seats VDSS RDS(on) max (m ) ID Benefits 50V 130@VGS = 10V 3.0A Advanced Process Technology 200@VGS = 4.5V 1.5A Dual N-Channel MOSFET Ultra Low On-Resistance 175 C Operating Temperature R

AUTOMOTIVE GRADE AUIRF7103Q HEXFET Power MOSFET Features l Advanced Planar Technology l Dual N Channel MOSFET 1 8 l Low On-Resistance S1 D1 V(BR)DSS 50V 2 7 l Dynamic dV/dT Rating G1 D1 3 6 l 175 C Operating Temperature S2 D2 RDS(on) max. 130m 4 5 l Fast Switching G2 D2 l Lead-Free, RoHS Compliant ID Top View 3.0A l Automotive Qualified* Description Specifically d

PD -96085A IRF7103IPbF HEXFET Power MOSFET l Adavanced Process Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = 50V 2 7 l Dual N-Channel MOSFET G1 D1 l Surface Mount 3 6 S2 D2 RDS(on) = 0.130 l Available in Tape & Reel 4 5 G2 D2 l Dynamic dv/dt Rating ID = 3.0A l Fast Switching Top View l Lead-Free Description The SO-8 has been modified through a customized lea

PD - 93944C IRF7103Q AUTOMOTIVE MOSFET Typical Applications Anti-lock Braking Systems (ABS) HEXFET Power MOSFET Electronic Fuel Injection ) ) ) ) Power Doors, Windows & Seats VDSS RDS(on) max (m ) ID Benefits 50V 130@VGS = 10V 3.0A Advanced Process Technology 200@VGS = 4.5V 1.5A Dual N-Channel MOSFET Ultra Low On-Resistance 175 C Operating Temperature R

IRF7103PbF-1 HEXFET Power MOSFET VDS 50 V 1 8 S1 D1 RDS(on) max 0.13 2 7 G1 D1 (@V = 10V) GS 3 6 S2 D2 RDS(on) max 0.20 4 5 (@V = 4.5V) G2 D2 GS Qg (typical) 12 nC SO-8 Top View ID 3.0 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturin

IRF7103TR www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channe