IRF7313Q - аналоги, параметры транзистора - Справочник транзисторов

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..1. Size:298K 1
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PD - 96125 IRF7313QPbF HEXFET Power MOSFET l Advanced Process Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = 30V l Dual N- Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Available in Tape & Reel 4 l 150 C Operating Temperature 5 G2 D2 RDS(on) = 0.029 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive appl

..2. Size:218K international rectifier
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PD - 96125A IRF7313QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 l Dual N- Channel MOSFET S1 D1 VDSS = 30V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l 150 C Operating Temperature l Lead-Free 4 5 G2 D2 RDS(on) = 0.029 Description Top View These HEXFET Power MOSFET's in a Dual SO-8 package utilize the lastes

0.1. Size:239K international rectifier
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PD - 97751 AUTOMOTIVE GRADE AUIRF7313Q HEXFET Power MOSFET Features l Advanced Planar Technology l Dual N Channel MOSFET V(BR)DSS 30V 1 8 S1 D1 l Low On-Resistance 2 7 G1 D1 l Dynamic dV/dT Rating RDS(on) typ. 23m 3 6 S2 D2 l 175 C Operating Temperature max. 29m 4 5 l Fast Switching G2 D2 l Lead-Free, RoHS Compliant ID 6.9A Top View l Automotive Qualified* Des

0.2. Size:578K infineon
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AUTOMOTIVE GRADE AUIRF7313Q VDSS Features 30V 1 8 S1 D1 Advanced Planar Technology 2 7 G1 D1 RDS(on) typ. 23m Dual N Channel MOSFET 3 6 S2 D2 max. 4 Low On-Resistance 5 29m G2 D2 Logic Level Gate Drive ID 6.9A Top View Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Lead-Free, RoHS Compliant