Справочник MOSFET. IRF7304Q

 

IRF7304Q MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF7304Q
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 0.7 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 22 nC
   trⓘ - Время нарастания: 26 ns
   Cossⓘ - Выходная емкость: 310 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: SO8

 Аналог (замена) для IRF7304Q

 

 

IRF7304Q Datasheet (PDF)

 ..1. Size:252K  1
 irf7304q.pdf

IRF7304Q IRF7304Q

PD - 96104IRF7304QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P Channel MOSFETVDSS = -20V2 7G1 D1l Surface Mountl Available in Tape & Reel3 6S2 D2l 150C Operating Temperature45G2 D2l Automotive [Q101] Qualified RDS(on) = 0.090l Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appl

 ..2. Size:252K  international rectifier
 irf7304qpbf.pdf

IRF7304Q IRF7304Q

PD - 96104IRF7304QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P Channel MOSFETVDSS = -20V2 7G1 D1l Surface Mountl Available in Tape & Reel3 6S2 D2l 150C Operating Temperature45G2 D2l Automotive [Q101] Qualified RDS(on) = 0.090l Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appl

 0.1. Size:517K  1
 auirf7304q.pdf

IRF7304Q IRF7304Q

AUTOMOTIVE GRADE AUIRF7304Q Features HEXFET Power MOSFET Advanced Planar Technology VDSS 1 8 Low On-Resistance S1 D1 -20V 2 7G1 D1 Dual P Channel MOSFET RDS(on) max. 0.0903 6S2 D2 Dynamic dv/dt Rating 4 5ID G2 D2-4.3A Logic Level 150C Operating Temperature Top View Fast Switching Lead-Free, RoHS Compliant

 0.2. Size:1692K  cn vbsemi
 irf7304qtr.pdf

IRF7304Q IRF7304Q

IRF7304QTRwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top V

 7.1. Size:232K  international rectifier
 irf7304pbf-1.pdf

IRF7304Q IRF7304Q

IRF7304PbF-1HEXFET Power MOSFETVDS -20 V1 8S1 D1RDS(on) max 0.09 2 7(@V = -4.5V) G1 D1GSQg 22 nC3 6S2 D2ID 4 5-4.3 AG2 D2(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentall

 7.2. Size:112K  international rectifier
 irf7304.pdf

IRF7304Q IRF7304Q

PD - 9.1240CIRF7304HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance1 8S1 D1 Dual P-Channel MosfetVDSS = -20V2 7G1 D1 Surface Mount3 6 Available in Tape & ReelS2 D2 Dynamic dv/dt Rating4 5G2 D2RDS(on) = 0.090 Fast SwitchingT op V iewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtec

 7.3. Size:231K  infineon
 irf7304pbf.pdf

IRF7304Q IRF7304Q

PD - 95038IRF7304PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P-Channel MosfetVDSS = -20V2 7G1 D1l Surface Mount3 6l Available in Tape & ReelS2 D2l Dynamic dv/dt Rating45G2 D2RDS(on) = 0.090l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize adva

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