IRF7507 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7507
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 0.7 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.4 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 5.3 nC
trⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 130 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
Тип корпуса: MICRO8
IRF7507 Datasheet (PDF)
irf7507.pdf
PD - 91269IIRF7507HEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFET1 8 Ultra Low On-Resistance S1 D1N-Ch P-Ch Dual N and P Channel MOSFET2 7G1 D1 Very Small SOIC Package3 6 VDSS 20V -20VS2 D2 Low Profile (
irf7507pbf.pdf
PD - 95218IRF7507PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFET1 8l Ultra Low On-Resistance S1 D1N-Ch P-Chl Dual N and P Channel MOSFET 2 7G1 D1l Very Small SOIC Package3 6VDSS 20V -20VS2 D2l Low Profile (
irf7509.pdf
PD - 91270JIRF7509HEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFET1 8 Ultra Low On-Resistance S1 D1N-Ch P-Ch Dual N and P Channel MOSFET2 7G1 D1 Very Small SOIC Package3 6 VDSS 30V -30VS2 D2 Low Profile (
irf7504.pdf
PD - 9.1267GIRF7504HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1 Dual P-Channel MOSFETVDSS = -20V2 7G1 D1 Very Small SOIC Package3 6S2 D2 Low Profile (
irf7501.pdf
PD - 91265HIRF7501PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ulrtra Low On-ResistanceVDSS =20V2 7 Dual N-Channel MOSFETG1 D1 Very Small SOIC Package3 6S2 D2 Low Profile (
irf7503.pdf
PD - 9.1266GIRF7503HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1 Dual N-Channel MOSFETVDSS = 30V2 7G1 D1 Very Small SOIC Package3 6S2 Low Profile (
irf7509pbf-1.pdf
IRF7509PbF-1HEXFET Power MOSFETN-CH P-CHN-CHANNEL MOSFET1 8VDS 30 -30 V S1 D12 7RDS(on) max G1 D10.11 0.2 (@V = 10V)GS3 6S2 D2Qg (typical) 7.8 7.5 nC45G2 D2ID 2.7 -2.0 A P-CHANNEL MOSFET(@T = 25C)AMicro8Top ViewFeatures BenefitsIndustry-standard pinout Micro-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount
irf7506.pdf
PD - 9.1268FIRF7506HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = -30V Dual P-Channel MOSFET2 7G1 D1 Very Small SOIC Package3 6S2 D2 Low Profile (
irf750a.pdf
Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 15 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
irf7503pbf.pdf
PD- 95346IRF7503PbF Lead-Freewww.irf.com 102/22/05IRF7503PbF2 www.irf.comIRF7503PbFwww.irf.com 3IRF7503PbF4 www.irf.comIRF7503PbFwww.irf.com 5IRF7503PbF6 www.irf.comIRF7503PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91
irf7506pbf.pdf
PD - 95696IRF7506PbF Lead-Freewww.irf.com9/2/04IRF7506PbF2 www.irf.comIRF7506PbFwww.irf.com 3IRF7506PbF4 www.irf.comIRF7506PbFwww.irf.com 5IRF7506PbF6 www.irf.comIRF7506PbFMicro8 Package OutlineLEAD ASSIGNMENTSINCHES MILLIMETERSDIMD MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91 1.11A1 .004 .008 0.10 0.208 7 6 5 8 7 6 5 B
irf7509pbf.pdf
PD - 95397IRF7509PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFET1 8l Ultra Low On-Resistance S1 D1N-Ch P-Chl Dual N and P Channel MOSFET2 7G1 D1l Very Small SOIC Package3 6 VDSS 30V -30VS2 D2l Low Profile (
irf7504pbf.pdf
PD- 95912IRF7504PbF Lead-Freewww.irf.com 12/22/05IRF7504PbF2 www.irf.comIRF7504PbFwww.irf.com 3IRF7504PbF4 www.irf.comIRF7504PbFwww.irf.com 5IRF7504PbF6 www.irf.comIRF7504PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSDIMD MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918