AUIRF7379Q MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AUIRF7379Q
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 25 nC
trⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 180 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
Тип корпуса: SO8
Аналог (замена) для AUIRF7379Q
AUIRF7379Q Datasheet (PDF)
auirf7379q.pdf
AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance VDSS 30V -30V 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.0703 6S2 D2 Dual N and P Channel MOSFET max. 0.045 0.09045G2 D2 Surface Mount P-CHANNEL MOSFETID 5.8A -4.3A Available in
auirf7379q.pdf
AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance VDSS 30V -30V 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.0703 6S2 D2 Dual N and P Channel MOSFET max. 0.045 0.09045G2 D2 Surface Mount P-CHANNEL MOSFETID 5.8A -4.3A Available in
auirf7341q.pdf
AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0433 6 Ultra Low On-Resistance S2 D24 5 max. Logic Level Gate Drive G2 D20.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175C Operating Temperature Lead-Free, RoHS Co
auirf7319q.pdf
AUTOMOTIVE GRADE AUIRF7319Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1VDSS 30V -30V Low On-Resistance 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.023 0.0423 6S2 D2 Dual N and P Channel MOSFET max. 0.029 0.05845G2 D2 Surface Mount P-CHANNEL MOSFETID 6.5A -4.9A Fully Avalanch
auirf7309q.pdf
AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance 2 7VDSS 30V -30V G1 D1 Logic Level Gate Drive 3 6S2 D2 Dual N and P Channel MOSFET RDS(on) max. 0.05 0.1045G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top ViewID 4.7A -3.5A
auirf7304q.pdf
AUTOMOTIVE GRADE AUIRF7304Q Features HEXFET Power MOSFET Advanced Planar Technology VDSS 1 8 Low On-Resistance S1 D1 -20V 2 7G1 D1 Dual P Channel MOSFET RDS(on) max. 0.0903 6S2 D2 Dynamic dv/dt Rating 4 5ID G2 D2-4.3A Logic Level 150C Operating Temperature Top View Fast Switching Lead-Free, RoHS Compliant
auirf7343q.pdf
PD - 96343BAUTOMOTIVE MOSFETAUIRF7343QHEXFET Power MOSFETFeaturesl Advanced Planar TechnologyN-Ch P-ChN-CHANNEL MOSFET1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFETV(BR)DSS55V -55V2 7G1 D1l Surface Mount3 6l Available in Tape & ReelS2 D2RDS(on) typ.0.043 0.095l 150C Operating Temperature45G2 D2l Automotive [Q101] Qualif
auirf7303q.pdf
AUTOMOTIVE GRADE AUIRF7303Q VDSS Features 1 8S1 D1 30V Advanced Planar Technology 2 7G1 D1RDS(on) max. Dual N Channel MOSFET 3 6S2 D20.054 Low On-Resistance 5G2 D2ID Logic Level Gate Drive 5.3A Top View Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
auirf7316q.pdf
AUTOMOTIVE GRADE AUIRF7316Q VDSS Features 1 8S1 D1 -30V Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0423 6 Low On-Resistance S2 D24 5 Logic Level Gate Drive D2 max. G20.058 Dual P Channel MOSFET Top ViewID -4.9A Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free, RoHS Complian
auirf7342q.pdf
PD - 97640AUTOMOTIVE GRADEAUIRF7342Q Advanced Planar Technology Low On-Resistance HEXFET Power MOSFET Dual P-Channel MOSFET Dynamic dV/dT Rating 1 8S1 D1V(BR)DSS-55V 150C Operating Temperature 2 7G1 D1 Fast Switching 3 6S2 D2RDS(on) max.0.105 Fully Avalanche Rated 4 5G2 D2 Lead-Free, RoHS CompliantID-3.4ATop View Autom
auirf7313q.pdf
PD - 97751AUTOMOTIVE GRADEAUIRF7313QHEXFET Power MOSFETFeaturesl Advanced Planar Technologyl Dual N Channel MOSFETV(BR)DSS30V1 8S1 D1l Low On-Resistance2 7G1 D1l Dynamic dV/dT Rating RDS(on) typ.23m3 6S2 D2l 175C Operating Temperature max. 29m4 5l Fast Switching G2 D2l Lead-Free, RoHS CompliantID6.9ATop Viewl Automotive Qualified*Des
auirf7341q.pdf
AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0433 6 Ultra Low On-Resistance S2 D24 5 max. Logic Level Gate Drive G2 D20.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175C Operating Temperature Lead-Free, RoHS Co
auirf7313q.pdf
AUTOMOTIVE GRADE AUIRF7313Q VDSS Features 30V 1 8S1 D1 Advanced Planar Technology 2 7G1 D1RDS(on) typ. 23m Dual N Channel MOSFET 3 6S2 D2 max. 4 Low On-Resistance 5 29mG2 D2 Logic Level Gate Drive ID 6.9A Top View Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Lead-Free, RoHS Compliant
auirf7309q.pdf
AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance 2 7VDSS 30V -30V G1 D1 Logic Level Gate Drive 3 6S2 D2 Dual N and P Channel MOSFET RDS(on) max. 0.05 0.1045G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top ViewID 4.7A -3.5A
auirf7343q.pdf
AUTOMOTIVE GRADE AUIRF7343Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1VDSS 55V -55V Ultra Low On-Resistance 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.043 0.0953 6S2 D2 Dual N and P Channel MOSFET max. 0.050 0.10545G2 D2 Surface Mount P-CHANNEL MOSFETID 4.7A -3.4A Availabl
auirf7316q.pdf
AUTOMOTIVE GRADE AUIRF7316Q VDSS Features 1 8S1 D1 -30V Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0423 6 Low On-Resistance S2 D24 5 Logic Level Gate Drive D2 max. G20.058 Dual P Channel MOSFET Top ViewID -4.9A Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free, RoHS Complian
auirf7342q.pdf
AUTOMOTIVE GRADE AUIRF7342Q VDSS 1 8S1 D1Features -55V 2 7G1 D1 Advanced Planar Technology 3 6RDS(on) max. S2 D2 Low On-Resistance 0.1054 5G2 D2 Logic Level Gate Drive ID -3.4A Dual P Channel MOSFET Top View Dynamic dv/dt Rating 150C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918