2SJ343 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SJ343
Маркировка: KQ
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 7 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.05 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 7.2 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 50 Ohm
Тип корпуса: SOT346 SC59 SMINI
2SJ343 Datasheet (PDF)
2sj343.pdf
2SJ343 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ343 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.8~-2.5 V High speed Enhancement-mode Small package Complementary to 2SK1826 Marking Equivalent CircuitMaximum Ratings (Ta = JEDEC TO-236MOD= 25C) ==JEITA SC-59Charac
2sj346.pdf
2SJ346 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ346 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1829 Marking Equivalent CircuitMaximum Ratings (Ta == 25C) ==JEDEC Characteristics Symbol Rating UnitJEITA SC-7
2sj342.pdf
2SJ342 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.8~-2.5 V High speed Enhancement-mode Small package Complementary to 2SK1825 Equivalent Circuit Maximum Ratings (Ta == 25C) ==JEDEC Characteristics Symbol Rating
2sj345.pdf
2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1828 Marking Equivalent CircuitMaximum Ratings (Ta == 25C) ==JEDEC TO-236MODJEITA SC-59Characteristics Symbol Ratin
2sj347.pdf
2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1830 Marking Equivalent CircuitMaximum Ratings (Ta = = 25C) ==JEDEC Characteristics Symbol Rating UnitJEITA
2sj349.pdf
2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ349 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 33 m (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.) Low leakage current : IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.
2sj344.pdf
2SJ344 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ344 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.8~-2.5 V High speed Enhancement-mode Small package Complementary to 2SK1827 Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70Characteri
2sj340.pdf
Ordering number:ENN6420P-Channel Silicon MOSFET2SJ340Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2093A 4V drive.[2SJ340] Enables simplified fabrication, high-density mount-4.510.21.3ing, and miniaturization in end products due to thesurface mountable package.1.20.80.41 2
2sj348.pdf
Ordering number:ENN6421P-Channel Silicon MOSFET2SJ348Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2052C 4V drive.[2SJ348]10.24.53.65.11.31.20.80.41 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220SpecificationsAbsolute Maximum Ratings at Ta = 25CParamete
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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