2SK1062 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK1062
Маркировка: KE
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.2 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 0.2 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 8 ns
Выходная емкость (Cd): 40 pf
Сопротивление сток-исток открытого транзистора (Rds): 1 Ohm
Тип корпуса: SOT346 SC59 SMINI
2SK1062 Datasheet (PDF)
2sk1062.pdf
2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Unit: mm Analog Switching Applications Interface Applications Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs@I = 50 mA D Low on resistance: R = 0.6 (typ.) @ I = 50 mA DS (ON) D Enhanceme
2sk1061.pdf
2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications Excellent switching times: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs Low on resistance: R = 0.6 (typ.) DS (ON) Enhancement-mode Complementary to 2
2sk1066.pdf
Ordering number:EN2747N-Channel Junction Silicon FET2SK1066High-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions High-frequency general-purpose amplifier.unit:mm AM tuner RF amplifier.2058 Low-noise amplifier.[2SK1066]0.3Features0.153 Large yfs .0 to 0.1 Small Crss. Ultralow noise figure. Ultrasmal
2sk1065.pdf
Ordering number:ENN2746AN-Channel Junction Silicon FET2SK1065High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Ultrasmall package facilitates miniaturization in endunit:mmproducts.2057A Small Crss (Crss=0.04pF typ).[2SK1065]0.30.1530 to 0.11 20.3 0.60.65 0.650.92.01 : Gate2 : Drain3 : SourceSANYO : MCPSpecific
2sk1067.pdf
Ordering number:EN2719N-Channel Silicon MOSFET2SK1067FM Tuner, VHF-Band Amplifier ApplicationsFeatures Package Dimensions Low noise NF=1.8dB typ (f=100MHz).unit:mm High power gain PG=27dB typ (f=100MHz).2057 Small reverse transfer capacitance Crss=0.035pF[2SK1067](VDS=10V, f=1MHz). Ultrasmall-sized package (MCP) permitting0.30.152SK1067-applied sets to
2sk1068.pdf
Ordering number:EN2748N-Channel Junction Silicon FET2SK1068Impedance Conversion ApplicationsApplications Package Dimensions Impedance conversion.unit:mm Infrared sensor.2058[2SK1068]Features0.3 Small IGSS.0.153 Small Crss.0 to 0.1 Ultrasmall-sized package permitting 2SK1068-applied sets to be made smaller and slimmer.1 20.3 0.60.65 0.65
2sk1069.pdf
Ordering number:EN2749N-Channel Junction Silicon FET2SK1069Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low-frequency general-purpose amplifiers.unit:mm Ideal for use in variable resistors, analog switches,2058low-frequency amplifiers, and constant-current[2SK1069]circuits.0.30.153Features0 to 0.1 Adoption of FBE
2sk1064.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1064 DESCRIPTION Drain Current ID=15A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS High current , high speed switching Switch mode power supplies DC-DC converters for telecom, industrial,and lighting equipment ideal for monitors B+ f
2sk1063.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1063 DESCRIPTION Drain Current ID=15A@ TC=25 Drain Source Voltage- : VDSS= 450V(Min) Fast Switching Speed APPLICATIONS High current , high speed switching Switch mode power supplies DC-DC converters for telecom, industrial,and lighting equipment ideal for monitors B+ f
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