2SK2037 TOSHIBA Field Effect Transistor Silicon N Channel Type 2SK2037 High Speed Switching Applications Unit: mm Analog Switching Applications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellent switching times: t = 0.28 s (typ.) ont = 0.34 s (typ.) off Small package. Enhancement-mode Marking Equivalent CircuitJEDE

2SK2036 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2036 High Speed Switching Applications Unit: mm Analog Switching Applications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellent switching times: t = 0.28 s (typ.) ont = 0.34 s (typ.) off Small package Enhancement-mode Marking Equivalent CircuitJ

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SK2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2035 High Speed Switching Applications Unit: mm Analog Switching Applications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellent switching times: t = 0.16 s (typ.) ont = 0.15 s (typ.) off Small package Enhancement-mode Marking Equivalent CircuitM

2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Unit: mm Analog Switch Applications High input impedance. Low gate threshold voltage.: V = 0.5~1.5 V th Excellent switching times: t = 0.16 s (typ.) ont = 0.15 s (typ.) off Small package. Enhancement-mode Marking Equivalent CircuitJE

2SK2033 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2033 High Speed Switching Applications Unit: mm Analog Switch Applications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellent switching times: t = 0.16 s (typ.) ont = 0.15 s (typ.) off Small package. Enhancement-mode Marking Equivalent CircuitJED

Power F-MOS FETs 2SK20322SK2032Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 200mJ15.0 0.3 5.0 0.2VGSS=30V guaranteed11.0 0.2 3.2High-speed switching : tf= 90ns3.2 0.1No secondary breakdown Applications2.0 0.22.0 0.1Non-contact relay1.1 0.1 0.6 0.2Solenoid drive5.45 0.3Motor drive10.9

SMD Type MOSFETN-Channel MOSFET2SK2033SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 100mA1 2 RDS(ON) 12 (VGS = 2.5V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 Low threshold voltage: Vth = 0.5~1.5 V1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sou

SMD Type MOSFETN-Channel MOSFET2SK2033SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 100mA1 2+0.1 RDS(ON) 12 (VGS = 2.5V) +0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Low threshold voltage: Vth = 0.5~1.5 V1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

isc N-Channel MOSFET Transistor 2SK2038DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

isc N-Channel MOSFET Transistor 2SK2039DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMB