Справочник MOSFET. 2SK2953

 

2SK2953 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK2953
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для 2SK2953

 

 

2SK2953 Datasheet (PDF)

 ..1. Size:430K  toshiba
2sk2953.pdf

2SK2953
2SK2953

2SK2953 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2953 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.31 (typ.) High forward transfer admittance : |Yfs| = 15 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0 to 4.0 V (VD

 ..2. Size:274K  inchange semiconductor
2sk2953.pdf

2SK2953
2SK2953

isc N-Channel MOSFET Transistor 2SK2953FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.1. Size:231K  1
2sk294 2sk295.pdf

2SK2953
2SK2953

 8.2. Size:193K  1
2sk2954-mr.pdf

2SK2953
2SK2953

 8.3. Size:87K  1
2sk2958stl.pdf

2SK2953
2SK2953

2SK2958(L), 2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1058-0400 (Previous: ADE-208-568B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 5.5 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(L)) (Package name: LDPAK

 8.4. Size:414K  toshiba
2sk2952.pdf

2SK2953
2SK2953

2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2952 Chopper Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 0.4 (typ.) (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 400 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS DMaxi

 8.5. Size:26K  sanyo
2sk2951.pdf

2SK2953
2SK2953

Ordering number : ENN69162SK2951N-Channel Silicon MOSFET2SK2951Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A[2SK2951]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecifications(Bottom view)Absolute Maximum Ratings at Ta=25CParamet

 8.6. Size:84K  renesas
2sk2957.pdf

2SK2953
2SK2953

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.7. Size:102K  renesas
rej03g1055 2sk2955ds.pdf

2SK2953
2SK2953

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:97K  renesas
rej03g1059 2sk2959ds.pdf

2SK2953
2SK2953

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.9. Size:100K  renesas
2sk2958l-s.pdf

2SK2953
2SK2953

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.10. Size:102K  renesas
rej03g1058 2sk2958lsds.pdf

2SK2953
2SK2953

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.11. Size:83K  renesas
2sk2959.pdf

2SK2953
2SK2953

2SK2959 Silicon N Channel MOS FET High Speed Power Switching REJ03G1059-0500 (Previous: ADE-208-569C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 7 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain(Flange)3. Source12 S3Rev.5.00 Sep 0

 8.12. Size:89K  renesas
2sk2958.pdf

2SK2953
2SK2953

2SK2958(L), 2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1058-0400 (Previous: ADE-208-568B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 5.5 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(L)) (Package name: LDPAK

 8.13. Size:88K  renesas
2sk2955.pdf

2SK2953
2SK2953

2SK2955 Silicon N Channel MOS FET High Speed Power Switching REJ03G1055-0400 (Previous: ADE-208-564B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.010 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. GateG2. Drain(Flange)3. Source1

 8.14. Size:201K  renesas
2sk2957l-s.pdf

2SK2953
2SK2953

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.15. Size:47K  hitachi
2sk2956.pdf

2SK2953
2SK2953

2SK2956Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-566B (Z)3rd. EditionJun 1998Features Low on-resistanceRDS(on) = 7m typ. 4V gate drive devices. High speed switchingOutlineTO220CFMDG1231. Gate2. Drain3. SourceS2SK2956Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 30 VGa

 8.16. Size:282K  inchange semiconductor
2sk2958l.pdf

2SK2953
2SK2953

isc N-Channel MOSFET Transistor 2SK2958LFEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.17. Size:282K  inchange semiconductor
2sk2957l.pdf

2SK2953
2SK2953

isc N-Channel MOSFET Transistor 2SK2957LFEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.18. Size:279K  inchange semiconductor
2sk2956.pdf

2SK2953
2SK2953

isc N-Channel MOSFET Transistor 2SK2956FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 8.19. Size:356K  inchange semiconductor
2sk2957s.pdf

2SK2953
2SK2953

isc N-Channel MOSFET Transistor 2SK2957SFEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.20. Size:288K  inchange semiconductor
2sk2959.pdf

2SK2953
2SK2953

isc N-Channel MOSFET Transistor 2SK2959FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 8.21. Size:278K  inchange semiconductor
2sk2954-mr.pdf

2SK2953
2SK2953

isc N-Channel MOSFET Transistor 2SK2954-MRFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.22. Size:288K  inchange semiconductor
2sk295.pdf

2SK2953
2SK2953

isc N-Channel MOSFET Transistor 2SK295FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.56(Max) @V =15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 8.23. Size:286K  inchange semiconductor
2sk2955.pdf

2SK2953
2SK2953

isc N-Channel MOSFET Transistor 2SK2955FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 8.24. Size:356K  inchange semiconductor
2sk2958s.pdf

2SK2953
2SK2953

isc N-Channel MOSFET Transistor 2SK2958SFEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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