2SK3670 - описание и поиск аналогов

 ..1. Size:209K  1
 2sk3670.pdf 

2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3670 Chopper Regulator and DC-DC Converter Applications Unit mm 2.5V-Gate Drive Low drain-source ON resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Yfs = 2.1 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 150 V) Enhancement mode Vth = 0.5 1.3 V (VDS

 8.1. Size:202K  toshiba
 2sk367.pdf 

 8.2. Size:111K  fuji
 2sk3677-01mr.pdf 

2SK3677-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un

 8.3. Size:113K  fuji
 2sk3673-01mr.pdf 

2SK3673-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un

 8.4. Size:264K  fuji
 2sk3676-01l-01s-01sj.pdf 

2SK3676-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

 8.5. Size:270K  fuji
 2sk3674-01l-s-sj.pdf 

2SK3674-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

 8.6. Size:116K  fuji
 2sk3679-01mr.pdf 

2SK3679-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

 8.7. Size:114K  fuji
 2sk3678-01.pdf 

2SK3678-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle

 8.8. Size:119K  fuji
 2sk3675-01.pdf 

2SK3675-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching 11.6 0.2 Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un

 8.9. Size:357K  inchange semiconductor
 2sk3674-01s.pdf 

isc N-Channel MOSFET Transistor 2SK3674-01S FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.10. Size:256K  inchange semiconductor
 2sk3677-01mr.pdf 

isc N-Channel MOSFET Transistor 2SK3677-01MR FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 8.11. Size:280K  inchange semiconductor
 2sk3673-01mr.pdf 

isc N-Channel MOSFET Transistor 2SK3673-01MR FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.18 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 8.12. Size:283K  inchange semiconductor
 2sk3674-01l.pdf 

isc N-Channel MOSFET Transistor 2SK3674-01L FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.13. Size:357K  inchange semiconductor
 2sk3676-01sj.pdf 

isc N-Channel MOSFET Transistor 2SK3676-01SJ FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 8.14. Size:357K  inchange semiconductor
 2sk3676-01s.pdf 

isc N-Channel MOSFET Transistor 2SK3676-01S FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.15. Size:280K  inchange semiconductor
 2sk3679-01mr.pdf 

isc N-Channel MOSFET Transistor 2SK3679-01MR FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.58 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and

 8.16. Size:357K  inchange semiconductor
 2sk3674-01sj.pdf 

isc N-Channel MOSFET Transistor 2SK3674-01SJ FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 8.17. Size:290K  inchange semiconductor
 2sk3678-01.pdf 

isc N-Channel MOSFET Transistor 2SK3678-01 FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.58 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.18. Size:346K  inchange semiconductor
 2sk3675-01.pdf 

isc N-Channel MOSFET Transistor 2SK3675-01 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.19. Size:283K  inchange semiconductor
 2sk3676-01l.pdf 

isc N-Channel MOSFET Transistor 2SK3676-01L FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so