2SK4003 - описание и поиск аналогов

 ..1. Size:173K  toshiba
 2sk4003.pdf 

2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) 2SK4003 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit mm MAX Low drain-source ON-resistance RDS (ON) = 1.7 (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS =

 ..2. Size:354K  inchange semiconductor
 2sk4003.pdf 

isc N-Channel MOSFET Transistor 2SK4003 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.1. Size:742K  toshiba
 2sk4002.pdf 

2SK4002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK4002 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit mm MAX Low drain-source ON-resistance RDS (ON) = 4.2 (typ.) High forward transfer admittance Yfs = 1.7 S (typ.) Low leakage current IDSS = 100 A (max)

 8.2. Size:442K  fuji
 2sk4006-01s-l-sj.pdf 

SPECIFICATION Device Name Power MOSFET Type Name 2SK4006-01L,S,SJ Spec. No. MS5F6095 Date Apr.-11-2005 Fuji Electric Device Technology Co.,Ltd. Matsumoto Factory NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Apr.-11-'05 CHECKED Apr.-11-'05 MS5F6095 1 / 21 CHECKED Apr.-11-'05 H04-004-05 This datasheet has been downloaded from http //www.digchip.com

 8.3. Size:200K  hitachi
 2sk400.pdf 

 8.4. Size:279K  inchange semiconductor
 2sk4005-01mr.pdf 

isc N-Channel MOSFET Transistor 2SK4005-01MR FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 8.5. Size:354K  inchange semiconductor
 2sk4002.pdf 

isc N-Channel MOSFET Transistor 2SK4002 FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 5.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.6. Size:280K  inchange semiconductor
 2sk4004-01mr.pdf 

isc N-Channel MOSFET Transistor 2SK4004-01MR FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and