Справочник MOSFET. SSM3J02T

 

SSM3J02T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSM3J02T
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 61 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
   Тип корпуса: TSM
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

SSM3J02T Datasheet (PDF)

 ..1. Size:184K  toshiba
ssm3j02t.pdfpdf_icon

SSM3J02T

SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch Unit: mmHigh Speed Switching Applications Component package suitable for high-density mounting Small Package Low ON Resistance : Ron = 0.5 (max) (@VGS = -4 V) : Ron = 0.7 (max) (@VGS = -2.5 V) Low-voltage operation possible Absolute Maximum Ratings

 7.1. Size:319K  toshiba
ssm3j02f.pdfpdf_icon

SSM3J02T

SSM3J02F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02F Power Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance : Ron = 0.5 (max) (@VGS = -4 V) : Ron = 0.7 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source

 8.1. Size:207K  toshiba
ssm3j01t.pdfpdf_icon

SSM3J02T

SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch Unit: mmHigh Speed Switching Applications Small Package Low on Resistance: Ron = 0.4 (max) (@VGS = -4 V) : Ron = 0.6 (max) (@VGS = -2.5 V) Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source

 8.2. Size:290K  toshiba
ssm3j05fu.pdfpdf_icon

SSM3J02T

SSM3J05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J05FU Power Management Switch High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 3.3 (max) (@VGS = -4 V) : Ron = 4.0 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-sour

Другие MOSFET... HN1K05FU , HN1K06FU , HN1L02FU , HN1L03FU , HN4K03JU , SSM3J01F , SSM3J01T , SSM3J02F , IRFB4110 , SSM3J05FU , SSM3J09FU , SSM3J108TU , SSM3J109TU , SSM3J110TU , SSM3J111TU , SSM3J112TU , SSM3J113TU .

History: TSM900N06CP | SI7415DN

 

 
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