Справочник MOSFET. SSM3J05FU

 

SSM3J05FU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM3J05FU
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 21 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.3 Ohm
   Тип корпуса: SOT323 SC70 USM

 Аналог (замена) для SSM3J05FU

 

 

SSM3J05FU Datasheet (PDF)

 ..1. Size:290K  toshiba
 ssm3j05fu.pdf

SSM3J05FU SSM3J05FU

SSM3J05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J05FU Power Management Switch High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 3.3 (max) (@VGS = -4 V) : Ron = 4.0 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-sour

 8.1. Size:207K  toshiba
 ssm3j01t.pdf

SSM3J05FU SSM3J05FU

SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch Unit: mmHigh Speed Switching Applications Small Package Low on Resistance: Ron = 0.4 (max) (@VGS = -4 V) : Ron = 0.6 (max) (@VGS = -2.5 V) Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source

 8.2. Size:319K  toshiba
 ssm3j02f.pdf

SSM3J05FU SSM3J05FU

SSM3J02F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02F Power Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance : Ron = 0.5 (max) (@VGS = -4 V) : Ron = 0.7 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source

 8.3. Size:184K  toshiba
 ssm3j02t.pdf

SSM3J05FU SSM3J05FU

SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch Unit: mmHigh Speed Switching Applications Component package suitable for high-density mounting Small Package Low ON Resistance : Ron = 0.5 (max) (@VGS = -4 V) : Ron = 0.7 (max) (@VGS = -2.5 V) Low-voltage operation possible Absolute Maximum Ratings

 8.4. Size:312K  toshiba
 ssm3j01f.pdf

SSM3J05FU SSM3J05FU

SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 0.4 (max) (VGS = -4 V) : Ron = 0.6 (max) (VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS -30 VGate-so

 8.5. Size:165K  toshiba
 ssm3j09fu.pdf

SSM3J05FU SSM3J05FU

SSM3J09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J09FU Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance: Ron = 2.7 (max) (@VGS = -10 V) : Ron = 4.2 (max) (@VGS = -4 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate-Source voltage

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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