Philips Semiconductors Product specification PowerMOS transistor BUK106-50L/S Logic level TOPFET BUK106-50LP/SP DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 50 Apurpose switch fo

Philips Semiconductors Product specification PowerMOS transistor BUK108-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 13.5 Ageneral purpose switch for

Philips Semiconductors Product specification PowerMOS transistor BUK101-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 26 Apurpose switch for automotive PD T

Philips Semiconductors Product specification PowerMOS transistor BUK107-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX. UNITlevel power MOSFET in a surfacemount plastic envelope, intended as VDS Continuous drain source voltage 50 Va general purpose switch forautomotive systems and other ID Continuous drain current

Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 45 Apurpose switch for automotive PD T

DISCRETE SEMICONDUCTORSDATA SHEETBUK107-50DSPowerMOS transistorLogic level TOPFETMarch 1997Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC13aPhilips Semiconductors Product specificationPowerMOS transistorBUK107-50DSLogic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX.

Philips Semiconductors Product specification PowerMOS transistor BUK100-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 13.5 Apurpose switch for automotive PD

Philips Semiconductors Product specification PowerMOS transistor BUK108-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic surface mount VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 15 Apurpose switch for automotive PD Total power

Philips Semiconductors Product specification PowerMOS transistor BUK109-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic surface mount VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 29 Apurpose switch for automotive PD Total power

Philips Semiconductors Product specification PowerMOS transistor BUK102-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 Vas a general purpose switch for ID Continuous drain current 50 Aautomotive systems and other PD Total p

Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX. UNITlevel power MOSFET in a surfacemount plastic envelope, intended as VDS Continuous drain source voltage 50 Va general purpose switch forautomotive systems and other ID Continuous drain current

Philips Semiconductors Product specification PowerMOS transistor BUK109-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 26 Ageneral purpose switch for P

Philips Semiconductors Product specification PowerMOS transistor BUK108-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 13.5 Ageneral purpose switch for

Philips Semiconductors Product specification PowerMOS transistor BUK107-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX. UNITlevel power MOSFET in a surfacemount plastic envelope, intended as VDS Continuous drain source voltage 50 Va general purpose switch forautomotive systems and other ID Continuous drain current

DISCRETE SEMICONDUCTORSDATA SHEETBUK107-50DLPowerMOS transistorLogic level TOPFETMarch 1997Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC13aPhilips Semiconductors Product specificationPowerMOS transistorBUK107-50DLLogic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX.

Philips Semiconductors Product specification PowerMOS transistor BUK101-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 Vas a general purpose switch for ID Continuous drain current 29 Aautomotive systems and other PD Total p

Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 15 Apurpose switch fo

Philips Semiconductors Product specification PowerMOS transistor BUK109-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 26 Ageneral purpose switch for P

Philips Semiconductors Product specification PowerMOS transistor BUK102-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 45 Apurpose switch for automotive PD T

Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 15 Apurpose switch fo

Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 26 Apurpose switch for automotive PD T

Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 13.5 Apurpose switch for automotive PD

Philips Semiconductors Product specification PowerMOS transistor BUK100-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 Vas a general purpose switch for ID Continuous drain current 15 Aautomotive systems and other PD Total p