SSM3J130TU - Даташиты. Аналоги. Основные параметры

SSM3J130TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J130TU Power Management Switch Applications 1.5 V drive Unit mm Low ON-resistance RDS(ON) = 63.2 m (max) (@VGS = -1.5 V) RDS(ON) = 41.1 m (max) (@VGS = -1.8 V) 2.1 0.1 RDS(ON) = 31.0 m (max) (@VGS = -2.5 V) 1.7 0.1 RDS(ON) = 25.8 m (max) (@VGS = -4.5 V) 1 Absolu

SSM3J134TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J134TU Power Management Switch Applications 1.5 V drive Unit mm Low ON-resistance RDS(ON) = 240 m (max) (@VGS = -1.5 V) RDS(ON) = 168 m (max) (@VGS = -1.8 V) RDS(ON) = 123 m (max) (@VGS = -2.5 V) RDS(ON) = 93 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25

SSM3J132TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J132TU Power Management Switch Applications 1.2-V drive Unit mm Low ON-resistance RDS(ON) = 94 m (max) (@VGS = -1.2 V) RDS(ON) = 39 m (max) (@VGS = -1.5 V) RDS(ON) = 29 m (max) (@VGS = -1.8 V) RDS(ON) = 21 m (max) (@VGS = -2.5 V) RDS(ON) = 17 m (max) (@VGS = -4.5

SSM3J133TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J133TU Power Management Switch Applications Unit mm 1.5V drive 2.1 0.1 Low ON-resistance RDS(ON) = 88.4 m (max) (@VGS = -1.5 V) RDS(ON) = 56.0 m (max) (@VGS = -1.8 V) 1.7 0.1 RDS(ON) = 39.7 m (max) (@VGS = -2.5 V) RDS(ON) = 29.8 m (max) (@VGS = -4.5 V) 1 3 2 Absolut

SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Power Management Switch Unit mm High Speed Switching Applications Small Package Low on Resistance Ron = 70 m (max) (@VGS = -4 V) Ron = 95 m (max) (@VGS = -2.5 V) Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Dr