Справочник MOSFET. SSM3J134TU

 

SSM3J134TU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM3J134TU
   Маркировка: JJM
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 4.7 nC
   Cossⓘ - Выходная емкость: 44 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.093 Ohm
   Тип корпуса: UFM

 Аналог (замена) для SSM3J134TU

 

 

SSM3J134TU Datasheet (PDF)

 ..1. Size:202K  toshiba
ssm3j134tu.pdf

SSM3J134TU
SSM3J134TU

SSM3J134TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J134TU Power Management Switch Applications 1.5 V drive Unit: mm Low ON-resistance: RDS(ON) = 240 m (max) (@VGS = -1.5 V) RDS(ON) = 168 m (max) (@VGS = -1.8 V) RDS(ON) = 123 m (max) (@VGS = -2.5 V) RDS(ON) = 93 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25

 7.1. Size:208K  toshiba
ssm3j132tu.pdf

SSM3J134TU
SSM3J134TU

SSM3J132TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J132TU Power Management Switch Applications 1.2-V driveUnit: mm Low ON-resistance: RDS(ON) = 94 m (max) (@VGS = -1.2 V) RDS(ON) = 39 m (max) (@VGS = -1.5 V) RDS(ON) = 29 m (max) (@VGS = -1.8 V) RDS(ON) = 21 m (max) (@VGS = -2.5 V) RDS(ON) = 17 m (max) (@VGS = -4.5

 7.2. Size:186K  toshiba
ssm3j130tu.pdf

SSM3J134TU
SSM3J134TU

SSM3J130TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J130TU Power Management Switch Applications 1.5 V drive Unit: mm Low ON-resistance:RDS(ON) = 63.2 m (max) (@VGS = -1.5 V) RDS(ON) = 41.1 m (max) (@VGS = -1.8 V) 2.10.1RDS(ON) = 31.0 m (max) (@VGS = -2.5 V) 1.70.1RDS(ON) = 25.8 m (max) (@VGS = -4.5 V) 1Absolu

 7.3. Size:203K  toshiba
ssm3j133tu.pdf

SSM3J134TU
SSM3J134TU

SSM3J133TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J133TU Power Management Switch Applications Unit: mm 1.5V drive2.10.1 Low ON-resistance: RDS(ON) = 88.4 m (max) (@VGS = -1.5 V) RDS(ON) = 56.0 m (max) (@VGS = -1.8 V) 1.70.1RDS(ON) = 39.7 m (max) (@VGS = -2.5 V) RDS(ON) = 29.8 m (max) (@VGS = -4.5 V) 132Absolut

 7.4. Size:199K  toshiba
ssm3j13t.pdf

SSM3J134TU
SSM3J134TU

SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Power Management Switch Unit: mmHigh Speed Switching Applications Small Package Low on Resistance: Ron = 70 m (max) (@VGS = -4 V) : Ron = 95 m (max) (@VGS = -2.5 V) Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDr

 7.5. Size:189K  toshiba
ssm3j135tu.pdf

SSM3J134TU
SSM3J134TU

SSM3J135TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J135TU Power Management Switch Applications 1.5 V drive Unit: mm Low ON-resistance:RDS(ON) = 260 m (max) (@VGS = -1.5 V) RDS(ON) = 180 m (max) (@VGS = -1.8 V) RDS(ON) = 132 m (max) (@VGS = -2.5 V) RDS(ON) = 103 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25

 7.6. Size:191K  toshiba
ssm3j132tu..pdf

SSM3J134TU
SSM3J134TU

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top