SSM3K01T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSM3K01T
Маркировка: KW
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.25 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
Пороговое напряжение включения |Ugs(th)|: 1.1 V
Максимально допустимый постоянный ток стока |Id|: 3.2 A
Максимальная температура канала (Tj): 150 °C
Выходная емкость (Cd): 102 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.12 Ohm
Тип корпуса: TSM
SSM3K01T Datasheet (PDF)
ssm3k01t.pdf
SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications Unit: mm Small Package Low on Resistance: Ron = 120 m (max) (@VGS = 4 V) : Ron = 150 m (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V (@VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating
ssm3k01f.pdf
SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 120 m (max) (VGS = 4 V) : Ron = 150 m (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Uni
ssm3k05fu.pdf
SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switching Applications Small package Unit: mm Low on resistance : Ron = 0.8 max (@VGS = 4 V) : Ron = 1.2 max (@VGS = 2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS 20 VGate-source
ssm3k09fu.pdf
SSM3K09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 0.7 (max) (@VGS = 10 V) : Ron = 1.2 (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS 30 VGate-Source voltage VGSS 20 VDC ID
ssm3k03te.pdf
SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Unit: mmAnalog Switch Applications 1.20.050.80.05 2.5 V gate drive High input impedance Low gate threshold voltage: Vth = 0.7~1.3 V www.DataSheet4U.com Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symb
ssm3k04fe.pdf
SSM3K04FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FE High Speed Switching Applications Unit: mm With built-in gate-source resistor: RGS = 1 M (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS 20 VGat
ssm3k04fv.pdf
SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High Speed Switching Applications Unit: mm1.20.05 With built-in gate-source resistor: RGS = 1 M (typ.) 0.80.05 2.5 V gate drive High input impedance Low gate threshold voltage: Vth = 0.7~1.3 V 1 Optimum for high-density mounting in small packages www.DataSheet4U.com
ssm3k02f.pdf
SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit: mm Small package Low on resistance: Ron = 200 m (max) (VGS = 4 V) : Ron = 250 m (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit
ssm3k02t.pdf
SSM3K02T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02T High Speed Switching Applications Unit: mm Small package Low on resistance: Ron = 200 m (max) (VGS = 4 V) : Ron = 250 m (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit
ssm3k03fv.pdf
SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Unit: mmAnalog Switch Applications 1.20.05 0.80.05 2.5-V gate drive High input impedance 1 Low gate threshold voltage: Vth = 0.7 to 1.3 V Optimum for high-density mounting in small packages 32Absolute Maximum Ratings (Ta = 25C) Char
ssm3k04fu.pdf
SSM3K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FU High Speed Switch Applications Unit: mm With built-in gate-source resistor: RGS = 1 M (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package www.DataSheet4U.comAbsolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source vol
ssm3k04fs.pdf
SSM3K04FS NMOS SSM3K04FS : mm : RGS = 1 M (typ.) VthCMOS : Vth = 0.7~1.3 V
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