SSM3K05FU. Аналоги и основные параметры
Наименование производителя: SSM3K05FU
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 0.15 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
Cossⓘ - Выходная емкость: 21 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
Тип корпуса: SOT323
SC70
USM
Аналог (замена) для SSM3K05FU
- подборⓘ MOSFET транзистора по параметрам
SSM3K05FU даташит
..1. Size:312K toshiba
ssm3k05fu.pdf 
SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switching Applications Small package Unit mm Low on resistance Ron = 0.8 max (@VGS = 4 V) Ron = 1.2 max (@VGS = 2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source
8.1. Size:305K toshiba
ssm3k01f.pdf 
SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit mm Small package Low on resistance Ron = 120 m (max) (VGS = 4 V) Ron = 150 m (max) (VGS = 2.5 V) Low gate threshold voltage Vth = 0.6 1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Uni
8.2. Size:210K toshiba
ssm3k09fu.pdf 
SSM3K09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU High Speed Switching Applications Unit mm Small package Low on resistance Ron = 0.7 (max) (@VGS = 10 V) Ron = 1.2 (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS 20 V DC ID
8.4. Size:616K toshiba
ssm3k03te.pdf 
SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Unit mm Analog Switch Applications 1.2 0.05 0.8 0.05 2.5 V gate drive High input impedance Low gate threshold voltage Vth = 0.7 1.3 V www.DataSheet4U.com Small package Absolute Maximum Ratings (Ta = 25 C) Characteristics Symb
8.5. Size:582K toshiba
ssm3k04fe.pdf 
SSM3K04FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FE High Speed Switching Applications Unit mm With built-in gate-source resistor RGS = 1 M (typ.) 2.5 V gate drive Low gate threshold voltage Vth = 0.7 1.3 V Small package Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gat
8.6. Size:559K toshiba
ssm3k04fv.pdf 
SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High Speed Switching Applications Unit mm 1.2 0.05 With built-in gate-source resistor RGS = 1 M (typ.) 0.8 0.05 2.5 V gate drive High input impedance Low gate threshold voltage Vth = 0.7 1.3 V 1 Optimum for high-density mounting in small packages www.DataSheet4U.com
8.7. Size:188K toshiba
ssm3k01t.pdf 
SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications Unit mm Small Package Low on Resistance Ron = 120 m (max) (@VGS = 4 V) Ron = 150 m (max) (@VGS = 2.5 V) Low Gate Threshold Voltage Vth = 0.6 1.1 V (@VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating
8.8. Size:302K toshiba
ssm3k02f.pdf 
SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit mm Small package Low on resistance Ron = 200 m (max) (VGS = 4 V) Ron = 250 m (max) (VGS = 2.5 V) Low gate threshold voltage Vth = 0.6 1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit
8.9. Size:199K toshiba
ssm3k02t.pdf 
SSM3K02T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02T High Speed Switching Applications Unit mm Small package Low on resistance Ron = 200 m (max) (VGS = 4 V) Ron = 250 m (max) (VGS = 2.5 V) Low gate threshold voltage Vth = 0.6 1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit
8.10. Size:261K toshiba
ssm3k03fv.pdf 
SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Unit mm Analog Switch Applications 1.2 0.05 0.8 0.05 2.5-V gate drive High input impedance 1 Low gate threshold voltage Vth = 0.7 to 1.3 V Optimum for high-density mounting in small packages 3 2 Absolute Maximum Ratings (Ta = 25 C) Char
8.11. Size:616K toshiba
ssm3k04fu.pdf 
SSM3K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FU High Speed Switch Applications Unit mm With built-in gate-source resistor RGS = 1 M (typ.) 2.5 V gate drive Low gate threshold voltage Vth = 0.7 1.3 V Small package www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source vol
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