Справочник MOSFET. SSM3K105TU

 

SSM3K105TU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM3K105TU
   Маркировка: KK5
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 0.5 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 1.8 V
   Максимально допустимый постоянный ток стока |Id|: 2.1 A
   Максимальная температура канала (Tj): 150 °C
   Выходная емкость (Cd): 57 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.11 Ohm
   Тип корпуса: UFM

 Аналог (замена) для SSM3K105TU

 

 

SSM3K105TU Datasheet (PDF)

 ..1. Size:350K  toshiba
 ssm3k105tu.pdf

SSM3K105TU SSM3K105TU

SSM3K105TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K105TU High Speed Switching Applications Unit: mm 4V drive 2.10.1 Low on-resistance: Ron = 480m (max) (@VGS = 3.3V) 1.70.1Ron = 200m (max) (@VGS = 4V) Ron = 110m (max) (@VGS = 10V) Lead(Pb)-free 12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-

 7.1. Size:148K  toshiba
 ssm3k104tu.pdf

SSM3K105TU SSM3K105TU

SSM3K104TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K104TU Power Management Switch Applications High-Speed Switching Applications Unit: mmUnit: mm 1.8 V drive Low ON-resistance: Ron = 110 m (max) (@VGS = 1.8 V) 2.10.1Ron = 74 m (max) (@VGS = 2.5 V) 1.70.1Ron = 56 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C) 1

 7.2. Size:366K  toshiba
 ssm3k107tu.pdf

SSM3K105TU SSM3K105TU

SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm 4 V drive2.10.1 Low ON-resistance: Ron = 410 m (max) (@VGS = 4V) 1.70.1Ron = 200 m (max) (@VGS = 10V) Lead(Pb)-free12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS 20 VGates

 7.3. Size:251K  toshiba
 ssm3k101tu.pdf

SSM3K105TU SSM3K105TU

SSM3K101TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K101TU High Speed Switching Applications Unit: mm 1.8V drive 2.10.1 Low on-resistance: Ron = 230m (max) (@VGS = 1.8 V) 1.70.1Ron = 138m (max) (@VGS = 2.5 V) Ron = 103m (max) (@VGS = 4.0 V) Lead(Pb)-free 12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit

 7.4. Size:251K  toshiba
 ssm3k102tu.pdf

SSM3K105TU SSM3K105TU

SSM3K102TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K102TU High Speed Switching Applications Unit: mm 1.8V drive 2.10.1 Low on-resistance: Ron = 154m (max) (@VGS = 1.8 V) 1.70.1Ron = 99m (max) (@VGS = 2.5 V) Ron = 71m (max) (@VGS = 4.0 V) Lead(Pb)-free 12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit

 7.5. Size:246K  toshiba
 ssm3k106tu.pdf

SSM3K105TU SSM3K105TU

SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm2.10.1 4 V drive 1.70.1 Low ON-resistance: Ron = 530 m (max) (@VGS = 4 V) Ron = 310 m (max) (@VGS = 10 V) Lead (Pb)-free 12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDS 20 VGate-

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