Справочник MOSFET. SSM3K12T

 

SSM3K12T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM3K12T
   Маркировка: KDJ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 2.6 nC
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 68 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.095 Ohm
   Тип корпуса: TSM

 Аналог (замена) для SSM3K12T

 

 

SSM3K12T Datasheet (PDF)

 ..1. Size:219K  toshiba
 ssm3k12t.pdf

SSM3K12T SSM3K12T

SSM3K12T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K12T DC-DC Converter Unit: mmHigh Speed Switching Applications Small Package Low ON-resistance : Ron = 95 m (max) (@VGS = 10 V) : Ron = 145 m (max) (@VGS = 4.5 V) High speed : ton = 21 ns : toff = 16 ns Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain

 7.1. Size:153K  toshiba
 ssm3k124tu .pdf

SSM3K12T SSM3K12T

SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: Ron = 120 m (max) (@VGS = 4V) 2.10.1Ron = 83 m (max) (@VGS = 10V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drainsource voltage VDS 30 VGatesource volta

 7.2. Size:191K  toshiba
 ssm3k127tu.pdf

SSM3K12T SSM3K12T

SSM3K127TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K127TU Power Management Switch Applications High-Speed Switching Applications Unit: mm2.10.11.70.1 1.8V drive Low ON-resistance: Ron = 286m (max) (@VGS = 1.8V) : Ron = 167m (max) (@VGS = 2.5V) 1: Ron = 123m (max) (@VGS = 4.0V) 32Absolute Maximum Ratings (Ta = 25C

 7.3. Size:314K  toshiba
 ssm3k124tu.pdf

SSM3K12T SSM3K12T

SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications Unit: mm 4 V drive2.10.1 Low ON-resistance: Ron = 120 m (max) (@VGS = 4V) 1.70.1Ron = 83 m (max) (@VGS = 10V) Lead(Pb)-free12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS 30 VGateso

 7.4. Size:197K  toshiba
 ssm3k128tu.pdf

SSM3K12T SSM3K12T

SSM3K128TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K128TU High-Speed Switching Applications Power Management Switch Applications UNIT: mm2.10.1 4.0V drive 1.70.1 Low ON-resistance : Ron = 360 m (max) (@VGS = 4.0V) : Ron = 217 m (max) (@VGS = 10V) 132Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Uni

 7.5. Size:166K  toshiba
 ssm3k123tu.pdf

SSM3K12T SSM3K12T

SSM3K123TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K123TU Power Management Switch Applications High-Speed Switching Applications Unit: mmUnit: mm 1.5 V drive Low ON-resistance: Ron = 66 m (max) (@VGS = 1.5 V) Ron = 43 m (max) (@VGS = 1.8 V) 2.10.1Ron = 32 m (max) (@VGS = 2.5 V) 1.70.1Ron = 28 m (max) (@VGS = 4.0 V) Absol

 7.6. Size:145K  toshiba
 ssm3k122tu.pdf

SSM3K12T SSM3K12T

SSM3K122TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K122TU Power Management Switch Applications High-Speed Switching Applications 1.5 V drive Unit: mmUnit: mm Low ON-resistance: Ron = 304 m (max) (@VGS = 1.5 V) 2.10.1Ron = 211 m (max) (@VGS = 1.8 V) 1.70.1Ron = 161 m (max) (@VGS = 2.5 V) Ron = 123 m (max) (@VGS = 4.0 V) 1

 7.7. Size:165K  toshiba
 ssm3k121tu.pdf

SSM3K12T SSM3K12T

SSM3K121TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K121TU Power Management Switch Applications High-Speed Switching Applications Unit: mmUnit: mm 1.5 V drive Low ON-resistance: Ron = 140 m (max) (@VGS = 1.5 V) Ron = 93 m (max) (@VGS = 1.8 V) 2.10.1Ron = 63 m (max) (@VGS = 2.5 V) 1.70.1Ron = 48 m (max) (@VGS = 4.0 V) Absolu

 7.8. Size:163K  toshiba
 ssm3k126tu.pdf

SSM3K12T SSM3K12T

SSM3K126TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K126TU High-Speed Switching Applications 4.0 V drive Unit: mm Low ON-resistance: Ron = 43 m (max) (@VGS = 4.0 V) Ron = 32 m (max) (@VGS = 10 V) 2.10.11.70.1Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit1Drain-Source voltage VDSS 30 VGate-Source voltag

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