SSM3K12T - описание и поиск аналогов

 ..1. Size:219K  toshiba
 ssm3k12t.pdf 

SSM3K12T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K12T DC-DC Converter Unit mm High Speed Switching Applications Small Package Low ON-resistance Ron = 95 m (max) (@VGS = 10 V) Ron = 145 m (max) (@VGS = 4.5 V) High speed ton = 21 ns toff = 16 ns Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain

 7.1. Size:153K  toshiba
 ssm3k124tu .pdf 

SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications Unit mm 4 V drive Low ON-resistance Ron = 120 m (max) (@VGS = 4V) 2.1 0.1 Ron = 83 m (max) (@VGS = 10V) 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 3 2 Drain source voltage VDS 30 V Gate source volta

 7.2. Size:191K  toshiba
 ssm3k127tu.pdf 

SSM3K127TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K127TU Power Management Switch Applications High-Speed Switching Applications Unit mm 2.1 0.1 1.7 0.1 1.8V drive Low ON-resistance Ron = 286m (max) (@VGS = 1.8V) Ron = 167m (max) (@VGS = 2.5V) 1 Ron = 123m (max) (@VGS = 4.0V) 3 2 Absolute Maximum Ratings (Ta = 25 C

 7.3. Size:314K  toshiba
 ssm3k124tu.pdf 

SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications Unit mm 4 V drive 2.1 0.1 Low ON-resistance Ron = 120 m (max) (@VGS = 4V) 1.7 0.1 Ron = 83 m (max) (@VGS = 10V) Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain source voltage VDS 30 V Gate so

 7.4. Size:197K  toshiba
 ssm3k128tu.pdf 

SSM3K128TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K128TU High-Speed Switching Applications Power Management Switch Applications UNIT mm 2.1 0.1 4.0V drive 1.7 0.1 Low ON-resistance Ron = 360 m (max) (@VGS = 4.0V) Ron = 217 m (max) (@VGS = 10V) 1 3 2 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Uni

 7.5. Size:166K  toshiba
 ssm3k123tu.pdf 

SSM3K123TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K123TU Power Management Switch Applications High-Speed Switching Applications Unit mm Unit mm 1.5 V drive Low ON-resistance Ron = 66 m (max) (@VGS = 1.5 V) Ron = 43 m (max) (@VGS = 1.8 V) 2.1 0.1 Ron = 32 m (max) (@VGS = 2.5 V) 1.7 0.1 Ron = 28 m (max) (@VGS = 4.0 V) Absol

 7.6. Size:145K  toshiba
 ssm3k122tu.pdf 

SSM3K122TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K122TU Power Management Switch Applications High-Speed Switching Applications 1.5 V drive Unit mm Unit mm Low ON-resistance Ron = 304 m (max) (@VGS = 1.5 V) 2.1 0.1 Ron = 211 m (max) (@VGS = 1.8 V) 1.7 0.1 Ron = 161 m (max) (@VGS = 2.5 V) Ron = 123 m (max) (@VGS = 4.0 V) 1

 7.7. Size:165K  toshiba
 ssm3k121tu.pdf 

SSM3K121TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K121TU Power Management Switch Applications High-Speed Switching Applications Unit mm Unit mm 1.5 V drive Low ON-resistance Ron = 140 m (max) (@VGS = 1.5 V) Ron = 93 m (max) (@VGS = 1.8 V) 2.1 0.1 Ron = 63 m (max) (@VGS = 2.5 V) 1.7 0.1 Ron = 48 m (max) (@VGS = 4.0 V) Absolu

 7.8. Size:163K  toshiba
 ssm3k126tu.pdf 

SSM3K126TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K126TU High-Speed Switching Applications 4.0 V drive Unit mm Low ON-resistance Ron = 43 m (max) (@VGS = 4.0 V) Ron = 32 m (max) (@VGS = 10 V) 2.1 0.1 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit 1 Drain-Source voltage VDSS 30 V Gate-Source voltag