SSM3K12T - Даташиты. Аналоги. Основные параметры

SSM3K12T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K12T DC-DC Converter Unit: mmHigh Speed Switching Applications Small Package Low ON-resistance : Ron = 95 m (max) (@VGS = 10 V) : Ron = 145 m (max) (@VGS = 4.5 V) High speed : ton = 21 ns : toff = 16 ns Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain

SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: Ron = 120 m (max) (@VGS = 4V) 2.10.1Ron = 83 m (max) (@VGS = 10V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drainsource voltage VDS 30 VGatesource volta

SSM3K127TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K127TU Power Management Switch Applications High-Speed Switching Applications Unit: mm2.10.11.70.1 1.8V drive Low ON-resistance: Ron = 286m (max) (@VGS = 1.8V) : Ron = 167m (max) (@VGS = 2.5V) 1: Ron = 123m (max) (@VGS = 4.0V) 32Absolute Maximum Ratings (Ta = 25C

SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications Unit: mm 4 V drive2.10.1 Low ON-resistance: Ron = 120 m (max) (@VGS = 4V) 1.70.1Ron = 83 m (max) (@VGS = 10V) Lead(Pb)-free12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS 30 VGateso

SSM3K128TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K128TU High-Speed Switching Applications Power Management Switch Applications UNIT: mm2.10.1 4.0V drive 1.70.1 Low ON-resistance : Ron = 360 m (max) (@VGS = 4.0V) : Ron = 217 m (max) (@VGS = 10V) 132Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Uni

SSM3K123TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K123TU Power Management Switch Applications High-Speed Switching Applications Unit: mmUnit: mm 1.5 V drive Low ON-resistance: Ron = 66 m (max) (@VGS = 1.5 V) Ron = 43 m (max) (@VGS = 1.8 V) 2.10.1Ron = 32 m (max) (@VGS = 2.5 V) 1.70.1Ron = 28 m (max) (@VGS = 4.0 V) Absol

SSM3K122TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K122TU Power Management Switch Applications High-Speed Switching Applications 1.5 V drive Unit: mmUnit: mm Low ON-resistance: Ron = 304 m (max) (@VGS = 1.5 V) 2.10.1Ron = 211 m (max) (@VGS = 1.8 V) 1.70.1Ron = 161 m (max) (@VGS = 2.5 V) Ron = 123 m (max) (@VGS = 4.0 V) 1

SSM3K121TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K121TU Power Management Switch Applications High-Speed Switching Applications Unit: mmUnit: mm 1.5 V drive Low ON-resistance: Ron = 140 m (max) (@VGS = 1.5 V) Ron = 93 m (max) (@VGS = 1.8 V) 2.10.1Ron = 63 m (max) (@VGS = 2.5 V) 1.70.1Ron = 48 m (max) (@VGS = 4.0 V) Absolu

SSM3K126TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K126TU High-Speed Switching Applications 4.0 V drive Unit: mm Low ON-resistance: Ron = 43 m (max) (@VGS = 4.0 V) Ron = 32 m (max) (@VGS = 10 V) 2.10.11.70.1Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit1Drain-Source voltage VDSS 30 VGate-Source voltag