SSM3K15F - Даташиты. Аналоги. Основные параметры

SSM3K15F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15F High Speed Switching Applications Unit: mmAnalog Switch Applications +0.52.5-0.3+0.25 Small package 1.5-0.15 Low on resistance : Ron = 4.0 (max) (@VGS = 4 V) 1: Ron = 7.0 (max) (@VGS = 2.5 V) 2 3Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrai

SSM3K15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS 30 VGate-sour

SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Unit: mmAnalog Switching Applications Compact package suitable for high-density mounting Low ON-resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDr

SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications Unit: mm1.20.05 Optimum for high-density mounting in small packages 0.80.05 Low on-resistance : RDS(ON) = 4.0 (max) (@VGS = 4 V) : RDS(ON) = 7.0 (max) (@VGS = 2.5 V) 1Absolute Maximum Ratings (Ta = 25C) 3Char

SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Unit: mmAnalog Switching Applications Compact package suitable for high-density mounting Low ON-resistance : R = 4.0 (max) (@V = 4 V) on GS: R = 7.0 (max) (@V = 2.5 V) on GSMaximum Ratings (Ta == 25C) ==Characteristic Symbol Rating Uni