Справочник MOSFET. SSM3K16FV

 

SSM3K16FV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM3K16FV
   Маркировка: DS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 9.8 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: SOT723 VESM

 Аналог (замена) для SSM3K16FV

 

 

SSM3K16FV Datasheet (PDF)

 ..1. Size:88K  toshiba
 ssm3k16fv.pdf

SSM3K16FV SSM3K16FV

SSM3K16FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FV High Speed Switching Applications nit: mmAnalog Switch Applications 1.20.05 Suitable for high-density mounting due to compact package 0.80.05 Low on-resistance : Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) 1Absolute Max

 6.1. Size:149K  toshiba
 ssm3k16fu.pdf

SSM3K16FV SSM3K16FV

SSM3K16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FU High Speed Switching Applications Analog Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25

 6.2. Size:148K  toshiba
 ssm3k16fs.pdf

SSM3K16FV SSM3K16FV

SSM3K16FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FS High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25C)

 7.1. Size:147K  toshiba
 ssm3k16te.pdf

SSM3K16FV SSM3K16FV

SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25C)

 7.2. Size:157K  toshiba
 ssm3k16ct.pdf

SSM3K16FV SSM3K16FV

SSM3K16CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K16CT High-Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package 0.60.050.50.03 Low ON-resistance : Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute

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