SSM3K309T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K309T Power Management Switch Applications High-Current Switching Applications Unit: mm 1.8V drive Low on-resistance : Ron = 47m (max) (@VGS = 1.8V) : Ron = 35m (max) (@VGS = 2.5V) : Ron = 31m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating

SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications Unit: mmHigh Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 131 m (max) (@VGS = 1.8V) Ron = 87m (max) (@VGS = 2.5V) Ron = 71 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDr

SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications Unit: mmHigh-Speed Switching Applications Unit: mm 1.8 V drive Low ON-resistance: Ron = 110 m (max) (@VGS = 1.8 V) Ron = 74 m (max) (@VGS = 2.5 V) Ron = 56 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol

SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: Ron = 120 m (max) (@VGS = 4V) Ron = 83 m (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS 30 VGatesource voltage VGSS 20 VDC ID 2.9

SSM3K301Twww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC