Справочник MOSFET. SSM3K7002BF

 

SSM3K7002BF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM3K7002BF
   Маркировка: NM
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 3.6 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.1 Ohm
   Тип корпуса: SOT346 SC59 SMINI

 Аналог (замена) для SSM3K7002BF

 

 

SSM3K7002BF Datasheet (PDF)

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 ssm3k7002bf.pdf

SSM3K7002BF SSM3K7002BF

SSM3K7002BF TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM3K7002BF High-Speed Switching Applications Analog Switch Applications Unit: mm Small package+0.52.5-0.3 Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) +0.251.5-0.15: RDS(ON) = 2.6 (max) (@VGS = 5 V) : RDS(ON) = 2.1 (max) (@VGS = 10 V) 1Absolute Maximum Rating

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 ssm3k7002bfu.pdf

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SSM3K7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM3K7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 (max) (@VGS = 5 V) : RDS(ON) = 2.1 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristics

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 ssm3k7002bfs.pdf

SSM3K7002BF SSM3K7002BF

SSM3K7002BFS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM3K7002BFS High-Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 (max) (@VGS = 5 V) : RDS(ON) = 2.1 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristics

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 ssm3k7002fu.pdf

SSM3K7002BF SSM3K7002BF

SSM3K7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K7002FU High Speed Switching Applications Analog Switch Applications Unit: mm2.1 0.1 Small package 1.25 0.1 Low ON resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) : Ron = 3.0 (max) (@VGS = 10 V) 12 3Maximum Ratings (Ta = 25C) Characteris

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SSM3K7002BF SSM3K7002BF

SSM3K7002AFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002AFU High-Speed Switching Applications Unit: mmAnalog Switch Applications Small package2.10.1 Low ON-resistance : Ron = 3.3 (max) (@VGS = 4.5 V) 1.250.1 : Ron = 3.2 (max) (@VGS = 5 V) : Ron = 3.0 (max) (@VGS = 10 V) 1Absolute Maximum Ratings (Ta = 25C) 23Characteri

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SSM3K7002AF TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002AF High-Speed Switching Applications Unit: mmAnalog Switch Applications +0.52.5-0.3 Small package+0.251.5-0.15 Low ON-resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) 1: Ron = 3.0 (max) (@VGS = 10 V) 2 3Absolute Maximum Ratings (Ta = 25C)

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 ssm3k7002cfu.pdf

SSM3K7002BF SSM3K7002BF

SSM3K7002CFUMOSFETs Silicon N-Channel MOSSSM3K7002CFUSSM3K7002CFUSSM3K7002CFUSSM3K7002CFU1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) Gate-Source diode for protection(2) Low drain-source on-resistance: RDS(ON) = 2.8 (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 (t

 5.5. Size:271K  toshiba
 ssm3k7002f.pdf

SSM3K7002BF SSM3K7002BF

SSM3K7002F TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002F High-Speed Switching Applications Unit: mmAnalog Switch Applications +0.52.5-0.3 Small package +0.251.5-0.15 Low ON-resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) 1: Ron = 3.0 (max) (@VGS = 10 V) 2 3Maximum Ratings (Ta = 25C) Charact

 5.6. Size:888K  cn vbsemi
 ssm3k7002f.pdf

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SSM3K7002Fwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG

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History: IPP80N08S2L-07 | STB16NM50N

 

 
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