SSM3K7002F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSM3K7002F
Маркировка: NC
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.2 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 0.2 A
Максимальная температура канала (Tj): 150 °C
Выходная емкость (Cd): 5.8 pf
Сопротивление сток-исток открытого транзистора (Rds): 3 Ohm
Тип корпуса: SOT346 SC59 SMINI
Аналог (замена) для SSM3K7002F
SSM3K7002F Datasheet (PDF)
ssm3k7002f.pdf
SSM3K7002F TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002F High-Speed Switching Applications Unit: mmAnalog Switch Applications +0.52.5-0.3 Small package +0.251.5-0.15 Low ON-resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) 1: Ron = 3.0 (max) (@VGS = 10 V) 2 3Maximum Ratings (Ta = 25C) Charact
ssm3k7002f.pdf
SSM3K7002Fwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG
ssm3k7002fu.pdf
SSM3K7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K7002FU High Speed Switching Applications Analog Switch Applications Unit: mm2.1 0.1 Small package 1.25 0.1 Low ON resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) : Ron = 3.0 (max) (@VGS = 10 V) 12 3Maximum Ratings (Ta = 25C) Characteris
ssm3k7002afu.pdf
SSM3K7002AFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002AFU High-Speed Switching Applications Unit: mmAnalog Switch Applications Small package2.10.1 Low ON-resistance : Ron = 3.3 (max) (@VGS = 4.5 V) 1.250.1 : Ron = 3.2 (max) (@VGS = 5 V) : Ron = 3.0 (max) (@VGS = 10 V) 1Absolute Maximum Ratings (Ta = 25C) 23Characteri
ssm3k7002af.pdf
SSM3K7002AF TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002AF High-Speed Switching Applications Unit: mmAnalog Switch Applications +0.52.5-0.3 Small package+0.251.5-0.15 Low ON-resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) 1: Ron = 3.0 (max) (@VGS = 10 V) 2 3Absolute Maximum Ratings (Ta = 25C)
ssm3k7002cfu.pdf
SSM3K7002CFUMOSFETs Silicon N-Channel MOSSSM3K7002CFUSSM3K7002CFUSSM3K7002CFUSSM3K7002CFU1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) Gate-Source diode for protection(2) Low drain-source on-resistance: RDS(ON) = 2.8 (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 (t
ssm3k7002bfu.pdf
SSM3K7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM3K7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 (max) (@VGS = 5 V) : RDS(ON) = 2.1 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristics
ssm3k7002bf.pdf
SSM3K7002BF TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM3K7002BF High-Speed Switching Applications Analog Switch Applications Unit: mm Small package+0.52.5-0.3 Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) +0.251.5-0.15: RDS(ON) = 2.6 (max) (@VGS = 5 V) : RDS(ON) = 2.1 (max) (@VGS = 10 V) 1Absolute Maximum Rating
ssm3k7002bfs.pdf
SSM3K7002BFS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM3K7002BFS High-Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 (max) (@VGS = 5 V) : RDS(ON) = 2.1 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristics
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