SSM6J26FE - описание и поиск аналогов

 ..1. Size:154K  toshiba
 ssm6j26fe.pdf 

SSM6J26FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J26FE High Speed Switching Applications Unit mm 1.6 0.05 Optimum for high-density mounting in small packages Low on-resistance Ron = 230m (max) (@VGS = -4 V) 1.2 0.05 Ron = 330m (max) (@VGS = -2.5 V) Ron = 980m (max) (@VGS = -1.8 V) 1 6 5 Maximum Ratings (Ta = 25 C) 2 4

 8.1. Size:305K  toshiba
 ssm6j206fe.pdf 

SSM6J206FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J206FE Power Management Switch Applications Unit mm High-Speed Switching Applications 1.8 V drive Low ON-resistance Ron = 320 m (max) (@VGS = -1.8 V) Ron = 186 m (max) (@VGS = -2.5 V) R = 130 m (max) (@V = -4.0 V) on GS Lead (Pb) free Maximum Ratings (Ta = 25 C) Cha

 8.2. Size:152K  toshiba
 ssm6j25fe.pdf 

SSM6J25FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J25FE High Speed Switching Applications Unit mm 1.6 0.05 Optimum for high-density mounting in small packages Low on-resistance Ron = 260m (max) (@VGS = -4 V) 1.2 0.05 Ron = 430m (max) (@VGS = -2.5 V) 1 6 5 Maximum Ratings (Ta = 25 C) 2 4 3 Characteristics Symbol Rating Uni

 8.3. Size:250K  toshiba
 ssm6j23fe.pdf 

SSM6J23FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) SSM6J23FE High Current Switching Applications Unit mm DC-DC Converter Suitable for high-density mounting due to compact package Low on-resistance Ron = 160 m (max) (@VGS = -4.0 V) Ron = 210 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Dra

 8.4. Size:202K  toshiba
 ssm6j213fe.pdf 

SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J213FE Power Management Switch Applications Unit mm 1.5-V drive Low ON-resistance RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V) RDS(ON) = 103 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25

 8.5. Size:218K  toshiba
 ssm6j205fe.pdf 

SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications Unit mm 1.8V drive P-ch 2-in-1 Low ON-resistance Ron = 460 m (max) (@VGS = -1.8 V) Ron = 306 m (max) (@VGS = -2.5 V) Ron = 234 m (max) (@VGS = -4.0 V) Maximum Ratings (Ta = 25 C) Characteristic Sym

 8.6. Size:226K  toshiba
 ssm6j215fe.pdf 

SSM6J215FE MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J215FE SSM6J215FE SSM6J215FE SSM6J215FE 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 154 m (max) (@VGS = -1.5 V) RDS(ON) = 104 m (max) (@VGS =

 8.7. Size:157K  toshiba
 ssm6j21tu.pdf 

SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) SSM6J21TU High Current Switching Applications Unit mm Suitable for high-density mounting due to compact package Low on resistance Ron = 88 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS 12

 8.8. Size:215K  toshiba
 ssm6j216fe.pdf 

SSM6J216FE MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J216FE SSM6J216FE SSM6J216FE SSM6J216FE 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 88.1 m (max) (@VGS = -1.5 V) RDS(ON) = 56.0 m (max) (@VGS

 8.9. Size:207K  toshiba
 ssm6j214fe.pdf 

SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J214FE Power Management Switch Applications Unit mm 1.8 V drive Low ON-resistance RDS(ON) = 149.6 m (max) (@VGS = -1.8 V) RDS(ON) = 77.6 m (max) (@VGS = -2.5 V) RDS(ON) = 57.0 m (max) (@VGS = -4.5 V) RDS(ON) = 50.0 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta

 8.10. Size:190K  toshiba
 ssm6j212fe.pdf 

SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J212FE Power Management Switch Applications Unit mm 1.5-V drive Low ON-resistance RDS(ON) = 94.0 m (max) (@VGS = -1.5 V) RDS(ON) = 65.4 m (max) (@VGS = -1.8 V) RDS(ON) = 49.0 m (max) (@VGS = -2.5 V) RDS(ON) = 40.7 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta

 8.11. Size:312K  toshiba
 ssm6j207fe.pdf 

SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J207FE High-Speed Switching Applications Unit mm 4 V drive Low ON-resistance Ron = 491 m (max) (@VGS = -4 V) Ron = 251 m (max) (@VGS = -10 V) Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain source voltage VDS -30 V Gate source voltage VGSS 20 V DC ID -1.4