SSM6J401TU - параметры транзистора MOSFET, его аналоги, datasheet

SSM6J401TU Datasheet (PDF)

..1. Size:197K toshiba
ssm6j401tu.pdf pdf_icon

SSM6J401TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J401TU DC/DC Converter Application High-Speed Switching Applications unit: mm2.10.1 4.0V drive 1.70.1 Low ON-resistance : RDS(ON) = 145m (max) (@VGS = -4 V) : RDS(ON) = 73m (max) (@VGS = -10 V) 1 62 5Absolute Maximum Ratings (Ta = 25C) 3 4Characteristic Symbol Rating

7.1. Size:197K toshiba
ssm6j402tu.pdf pdf_icon

SSM6J402TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J402TU DC/DC Converter Application High-Speed Switching Applications unit: mm2.10.1 4.0 V drive 1.70.1 Low ON-resistance : RDS(ON) = 225m max (@VGS = -4 V) : RDS(ON) = 117m max (@VGS = -10 V) 1 62 5Absolute Maximum Ratings (Ta = 25C) 3 4Characteristic Symbol Rating

7.2. Size:221K toshiba
ssm6j409tu.pdf pdf_icon

SSM6J409TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) SSM6J409TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.5V drive Low ON-resistance: Ron = 72.3m (max) (@VGS = -1.5 V) Ron = 46.2m (max) (@VGS = -1.8 V) Ron = 30.2m (max) (@VGS = -2.5 V) Ron = 22.1m (max) (@VGS = -4.5 V) Absolut

8.1. Size:217K toshiba
ssm6j410tu.pdf pdf_icon

SSM6J410TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J410TU Power Management Switch Applications Unit: mm High-Speed Switching Applications 4-V drive Low ON-resistance RDS(ON) = 393m (max) (@VGS = 4 V) RDS(ON) = 216m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-Sou