Справочник MOSFET. BUK116-50S

 

BUK116-50S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK116-50S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: SOT426
     - подбор MOSFET транзистора по параметрам

 

BUK116-50S Datasheet (PDF)

 5.1. Size:108K  philips
buk116-50l-s 1.pdfpdf_icon

BUK116-50S

Philips Semiconductors Product specification Logic level TOPFET BUK116-50L/S SMD version of BUK106-50L/S DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin surface VDS Continuous drain source voltage 50 Vmounting plastic envelope, intended ID Continuous drain current 50 Aas a general purpose

 9.1. Size:87K  philips
buk110-50gl 1.pdfpdf_icon

BUK116-50S

Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 45 Ageneral purpose switch for P

 9.2. Size:111K  philips
buk114-50l-s.pdfpdf_icon

BUK116-50S

Philips Semiconductors Product specification Logic level TOPFET BUK114-50L/S SMD version of BUK104-50L/S DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin surface VDS Continuous drain source voltage 50 Vmounting plastic envelope, intended ID Continuous drain current 15 Aas a general purpose

 9.3. Size:44K  philips
buk118-50dl.pdfpdf_icon

BUK116-50S

Philips Semiconductors Product specification Logic level TOPFET BUK118-50DL DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin plastic ID Continuous drain current 16 Apackage. PD Total power dissipation 65 WTj Continuous

Другие MOSFET... BUK110-50DL , BUK110-50GL , BUK110-50GS , BUK111-50GL , BUK112-50GL , BUK114-50L , BUK114-50S , BUK116-50L , IRLZ44N , BUK200-50X , BUK203-50X , BUK203-50Y , BUK204-50Y , BUK207-50X , BUK207-50Y , BUK426-1000A , BUK426-1000B .

History: TTP118N08A | 2N4392CSM | TK3A60DA | IXTP30N08MA | CEU4301 | QS8K13

 

 
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