SSM6K07FU - описание и поиск аналогов

 ..1. Size:192K  toshiba
 ssm6k07fu.pdf 

SSM6K07FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K07FU DC-DC Converters Unit mm High Speed Switching Applications Small package Low on resistance R = 130 m max (@V = 10 V) on GS R = 220 m max (@V = 4 V) on GS Low input capacitance Ciss = 102 pF typ. C = 22 pF typ. rss Maximum Ratings (Ta = = 25 C) = = Characterist

 8.1. Size:342K  toshiba
 ssm6k06fu.pdf 

SSM6K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K06FU High Speed Switching Applications Unit mm Small package Low ON- resistance R = 160 m max (@VGS = 4 V) DS(ON) R = 210 m max (@VGS = 2.5 V) DS(ON) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20

 8.2. Size:150K  toshiba
 ssm6k08fu.pdf 

SSM6K08FU CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category SSM6K08FU High Speed Switching Applications Unit mm Small package Low on resistance R = 105 m (max) (@V = 4 V) on GS R = 140 m (max) (@V = 2.5 V) on GS High-speed switching ton = 16 ns (typ.) t = 15 ns (typ.) off Maximum Ratings (Ta = = 25 C) = = Char

 9.1. Size:212K  toshiba
 ssm6k406tu.pdf 

SSM6K406TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K406TU High-Speed Switching Applications 4.5-V drive Unit mm Low ON-resistance Ron = 38.5 m (max) (@VGS = 4.5 V) 2.1 0.1 Ron = 25.0 m (max) (@VGS = 10 V) 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) 1 6 Characteristics Symbol Rating Unit 2 5 Drain source voltage VDSS 30 V 3 4

 9.2. Size:202K  toshiba
 ssm6k210fe.pdf 

SSM6K210FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K210FE High-Speed Switching Applications Power Management Switch Applications Unit mm 4.0-V drive Low ON-resistance Ron = 371 m (max) (@VGS = 4.0 V), Ron = 228 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDS

 9.3. Size:165K  toshiba
 ssm6k18tu.pdf 

SSM6K18TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) SSM6K18TU High Current Switching Applications Unit mm Suitable for high-density mounting due to compact package Low on resistance Ron = 54 m (max) (@VGS = 2.5 V) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS 12 V

 9.4. Size:214K  toshiba
 ssm6k403tu.pdf 

SSM6K403TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS SSM6K403TU Power Management Switch Applications UNIT mm High-Speed Switching Applications 2.1 0.1 1.7 0.1 1 6 1.5V drive Low ON-resistance Ron = 66m (max) (@VGS = 1.5V) 2 5 Ron = 43m (max) (@VGS = 1.8V) 3 4 Ron = 32m (max) (@VGS = 2.5V) Ron = 28m (max) (@VGS = 4.0V) Absolute

 9.5. Size:193K  toshiba
 ssm6k404tu.pdf 

SSM6K404TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K404TU High-Speed Switching Applications Power Management Switch Applications Unit mm 1.5-V drive Low ON-resistance RDS(ON) = 147 m (max) (@VGS = 1.5 V) 2.1 0.1 RDS(ON) = 100 m (max) (@VGS = 1.8 V) 1.7 0.1 RDS(ON) = 70 m (max) (@VGS = 2.5 V) RDS(ON) = 55 m (max) (@VGS =

 9.6. Size:200K  toshiba
 ssm6k34tu.pdf 

SSM6K34TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K34TU High Current Switching Applications Unit mm Power Management Switch Applications 4.5V drive Low on resistance Ron = 77 m (max) (@VGS = 4.5 V) Ron = 50 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate

 9.7. Size:198K  toshiba
 ssm6k203fe.pdf 

SSM6K203FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K203FE High-Speed Switching Applications Unit mm Power Management Switch Applications 1.5 V drive Low ON-resistance Ron = 153 m (max) (@VGS = 1.5V) Ron = 106 m (max) (@VGS = 1.8V) Ron = 76 m (max) (@VGS = 2.5V) Ron = 61 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta

 9.8. Size:197K  toshiba
 ssm6k204fe.pdf 

SSM6K204FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K204FE High-Speed Switching Applications Power Management Switch Applications Unit mm 1.5V drive Low ON-resistance Ron = 307 m (max) (@VGS = 1.5V) Ron = 214 m (max) (@VGS = 1.8V) Ron = 164 m (max) (@VGS = 2.5V) Ron = 126 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta

 9.9. Size:278K  toshiba
 ssm6k22fe.pdf 

SSM6K22FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) SSM6K22FE High Current Switching Applications Unit mm DC-DC Converter Suitable for high-density mounting due to compact package Low on resistance Ron = 170 m (max) (@VGS = 4.0 V) Ron = 230 m (max) (@VGS = 2.5 V) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain

 9.10. Size:213K  toshiba
 ssm6k217fe.pdf 

SSM6K217FE MOSFETs Silicon N-Channel MOS SSM6K217FE SSM6K217FE SSM6K217FE SSM6K217FE 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 155 m (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) =

 9.11. Size:261K  toshiba
 ssm6k30fe.pdf 

SSM6K30FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) SSM6K30FE High-speed switching Unit mm DC-DC Converter Small package Low RDS (ON) RDS(ON) = 210 m (max) (@VGS = 10 V) R DS(ON) = 420 m (max) (@VGS = 4 V) High-speed switching ton = 19 ns (typ.) toff = 10 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) 1,2,5,6

 9.12. Size:93K  toshiba
 ssm6k31fe.pdf 

SSM6K31FE Silicon P Channel MOS Type ( -MOS ) SSM6K31FE TENTATIVE High speed switching Unit mm DC-DC Converter small package Low RDS (ON) Ron = 240 m (typ) (@VGS = 10 V) Ron = 400 m (typ) (@VGS = 4 V) Maximum Ratings (Ta = 25 C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS 20 V 1,2,5,6

 9.13. Size:153K  toshiba
 ssm6k24fe.pdf 

SSM6K24FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K24FE High Speed Switching Applications Unit mm 1.6 0.05 Optimum for high-density mounting in small packages Low on-resistance Ron = 145m (max) (@VGS = 4.5 V) 1.2 0.05 Ron = 180m (max) (@VGS = 2.5 V) 1 6 Maximum Ratings (Ta = 25 C) 5 2 Characteristics Symbol Rating Unit 4

 9.14. Size:819K  toshiba
 ssm6k32tu.pdf 

SSM6K32TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K32TU Unit mm Relay drive, DC/DC converter application 4Vdrive Low on resistance Ron = 440m (max) (@VGS = 4 V) Ron = 300m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 ) Characteristics Symbol Rating Unit Drain-Source voltage VDS 60 V Gate-Source voltage VGSS 20 V DC ID 2

 9.15. Size:189K  toshiba
 ssm6k208fe.pdf 

SSM6K208FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K208FE High-Speed Switching Applications Power Management Switch Applications Unit mm 1.8V drive Low ON-resistance Ron = 296m (max) (@VGS = 1.8 V) Ron = 177m (max) (@VGS = 2.5 V) Ron = 133m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rati

 9.16. Size:226K  toshiba
 ssm6k781g.pdf 

SSM6K781G MOSFETs Silicon N-Channel MOS SSM6K781G SSM6K781G SSM6K781G SSM6K781G 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 17.9 m (typ.) (@VGS = 2.5 V, ID = 1.5 A) RDS(ON) = 14.4 m (typ.) (@VGS =

 9.17. Size:232K  toshiba
 ssm6k504nu.pdf 

SSM6K504NU MOSFETs Silicon N-Channel MOS (U-MOS -H) SSM6K504NU SSM6K504NU SSM6K504NU SSM6K504NU 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 26 m (max) (@VGS = 4.5 V) RDS(ON) = 19.5 m (max) (@VGS = 10

 9.18. Size:202K  toshiba
 ssm6k411tu.pdf 

SSM6K411TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K411TU Power Management Switch Applications High-Speed Switching Applications Unit mm 2.5-V drive 2.1 0.1 Low ON-resistance RDS(ON) = 23.8 m (max) (@VGS = 2.5 V) 1.7 0.1 RDS(ON) = 14.3 m (max) (@VGS = 3.5 V) RDS(ON) = 12 m (max) (@VGS = 4.5 V) 1 6 2 5 Absolute Maximum

 9.19. Size:193K  toshiba
 ssm6k405tu.pdf 

SSM6K405TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K405TU High-Speed Switching Applications Power Management Switch Applications Unit mm 1.5V drive Low ON-resistance Ron = 307 m (max) (@VGS = 1.5V) 2.1 0.1 Ron = 214 m (max) (@VGS = 1.8V) 1.7 0.1 Ron = 164 m (max) (@VGS = 2.5V) Ron = 126 m (max) (@VGS = 4.0V) 1 6 Abso

 9.20. Size:244K  toshiba
 ssm6k202fe.pdf 

SSM6K202FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K202FE Unit mm High-Speed Switching Applications Power Management Switch Applications 1.8 V drive Low ON-resistance Ron = 145 m (max) (@VGS = 1.8V) Ron = 101 m (max) (@VGS = 2.5V) Ron = 85 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rat

 9.21. Size:321K  toshiba
 ssm6k407tu.pdf 

SSM6K407TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K407TU Unit mm DC-DC Converter, Relay Drive and Motor Drive Applications 2.1 0.1 1.7 0.1 1 6 4V drive Low ON-resistance Ron = 440m (max) (@VGS = 4 V) 2 5 Ron = 300m (max) (@VGS = 10 V) 3 4 Absolute Maximum Ratings (Ta = 25 ) (Note) 1,2,5,6 Drain Characteristic Symbol Rating U

 9.22. Size:197K  toshiba
 ssm6k211fe.pdf 

SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS ) SSM6K211FE High-Speed Switching Applications Power Management Switch Applications Unit mm 1.5-V drive Low ON-resistance Ron = 118 m (max) (@VGS = 1.5 V) Ron = 82 m (max) (@VGS = 1.8 V) Ron = 59 m (max) (@VGS = 2.5 V) Ron = 47 m (max) (@VGS = 4.5 V) Absolute Maximum

 9.23. Size:154K  toshiba
 ssm6k25fe.pdf 

SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K25FE High Speed Switching Applications Unit mm 1.6 0.05 Optimum for high-density mounting in small packages Low on-resistance Ron = 395m (max) (@VGS = 1.8 V) 1.2 0.05 Ron = 190m (max) (@VGS = 2.5 V) Ron = 145m (max) (@VGS = 4.0 V) 1 6 5 Maximum Ratings (Ta = 25 C) 2 4