SSM6K18TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM6K18TU High Current Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on resistance: Ron = 54 m (max) (@VGS = 2.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 V

SSM6K406TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K406TU High-Speed Switching Applications 4.5-V drive Unit: mm Low ON-resistance: Ron = 38.5 m (max) (@VGS = 4.5 V) 2.10.1 Ron = 25.0 m (max) (@VGS = 10 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1 6Characteristics Symbol Rating Unit2 5Drainsource voltage VDSS 30 V3 4

SSM6K210FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K210FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 4.0-V drive Low ON-resistance: Ron = 371 m (max) (@VGS = 4.0 V), Ron = 228 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS

SSM6K403TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS SSM6K403TU Power Management Switch Applications UNIT: mm High-Speed Switching Applications 2.10.11.70.11 6 1.5V drive Low ON-resistance:Ron = 66m (max) (@VGS = 1.5V) 2 5Ron = 43m (max) (@VGS = 1.8V) 3 4Ron = 32m (max) (@VGS = 2.5V) Ron = 28m (max) (@VGS = 4.0V) Absolute

SSM6K404TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K404TU High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 147 m (max) (@VGS = 1.5 V) 2.10.1RDS(ON) = 100 m (max) (@VGS = 1.8 V) 1.70.1RDS(ON) = 70 m (max) (@VGS = 2.5 V) RDS(ON) = 55 m (max) (@VGS =

SSM6K34TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K34TU High Current Switching Applications Unit: mmPower Management Switch Applications 4.5V drive Low on resistance: :Ron = 77 m (max) (@VGS = 4.5 V) :Ron = 50 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS 30 VGate

SSM6K203FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K203FE High-Speed Switching Applications Unit: mm Power Management Switch Applications 1.5 V drive Low ON-resistance: Ron = 153 m (max) (@VGS = 1.5V) Ron = 106 m (max) (@VGS = 1.8V) Ron = 76 m (max) (@VGS = 2.5V) Ron = 61 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta

SSM6K204FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K204FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: Ron = 307 m (max) (@VGS = 1.5V) Ron = 214 m (max) (@VGS = 1.8V) Ron = 164 m (max) (@VGS = 2.5V) Ron = 126 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta

SSM6K22FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM6K22FE High Current Switching Applications Unit: mmDC-DC Converter Suitable for high-density mounting due to compact package Low on resistance: Ron = 170 m (max) (@VGS = 4.0 V) Ron = 230 m (max) (@VGS = 2.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain

SSM6K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K06FU High Speed Switching Applications Unit: mm Small package Low ON- resistance: R = 160 m max (@VGS = 4 V) DS(ON): R = 210 m max (@VGS = 2.5 V) DS(ON) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS 20

SSM6K07FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K07FU DC-DC Converters Unit: mmHigh Speed Switching Applications Small package Low on resistance : R = 130 m max (@V = 10 V) on GS: R = 220 m max (@V = 4 V) on GS Low input capacitance : Ciss = 102 pF typ. : C = 22 pF typ. rssMaximum Ratings (Ta == 25C) ==Characterist

SSM6K217FEMOSFETs Silicon N-Channel MOSSSM6K217FESSM6K217FESSM6K217FESSM6K217FE1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 155 m (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) =

SSM6K30FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) SSM6K30FE High-speed switching Unit: mm DC-DC Converter Small package Low RDS (ON): RDS(ON) = 210 m (max) (@VGS = 10 V) : R DS(ON) = 420 m (max) (@VGS = 4 V) High-speed switching: ton = 19 ns (typ.) : toff = 10 ns (typ.) Absolute Maximum Ratings (Ta = 25C) 1,2,5,6

SSM6K31FE Silicon P Channel MOS Type (-MOS) SSM6K31FE TENTATIVE High speed switching Unit: mm DC-DC Converter small package Low RDS (ON) : Ron = 240 m (typ) (@VGS = 10 V) : Ron = 400 m (typ) (@VGS = 4 V) Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 20 V 1,2,5,6 :

SSM6K24FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K24FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 145m (max) (@VGS = 4.5 V) 1.20.05Ron = 180m (max) (@VGS = 2.5 V) 1 6Maximum Ratings (Ta = 25C) 52Characteristics Symbol Rating Unit4

SSM6K32TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K32TU Unit: mm Relay drive, DC/DC converter application 4Vdrive Low on resistance: Ron = 440m (max) (@VGS = 4 V) Ron = 300m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25) Characteristics Symbol Rating UnitDrain-Source voltage VDS 60 VGate-Source voltage VGSS 20 VDC ID 2

SSM6K208FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K208FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.8V drive Low ON-resistance: Ron = 296m (max) (@VGS = 1.8 V) Ron = 177m (max) (@VGS = 2.5 V) Ron = 133m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rati

SSM6K781GMOSFETs Silicon N-Channel MOSSSM6K781GSSM6K781GSSM6K781GSSM6K781G1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 17.9 m (typ.) (@VGS = 2.5 V, ID = 1.5 A) RDS(ON) = 14.4 m (typ.) (@VGS =

SSM6K504NUMOSFETs Silicon N-Channel MOS (U-MOS-H)SSM6K504NUSSM6K504NUSSM6K504NUSSM6K504NU1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 4.5 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 26 m (max) (@VGS = 4.5 V) RDS(ON) = 19.5 m (max) (@VGS = 10

SSM6K411TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K411TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 2.5-V drive 2.10.1 Low ON-resistanceRDS(ON) = 23.8 m (max) (@VGS = 2.5 V) 1.70.1 RDS(ON) = 14.3 m (max) (@VGS = 3.5 V) RDS(ON) = 12 m (max) (@VGS = 4.5 V) 1 62 5Absolute Maximum

SSM6K405TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K405TU High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: Ron = 307 m (max) (@VGS = 1.5V) 2.10.1Ron = 214 m (max) (@VGS = 1.8V) 1.70.1Ron = 164 m (max) (@VGS = 2.5V) Ron = 126 m (max) (@VGS = 4.0V) 1 6Abso

SSM6K08FU CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category SSM6K08FU High Speed Switching Applications Unit: mm Small package Low on resistance: R = 105 m (max) (@V = 4 V) on GSR = 140 m (max) (@V = 2.5 V) on GS High-speed switching: ton = 16 ns (typ.) t = 15 ns (typ.) offMaximum Ratings (Ta == 25C) ==Char

SSM6K202FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K202FE Unit: mm High-Speed Switching Applications Power Management Switch Applications 1.8 V drive Low ON-resistance: Ron = 145 m (max) (@VGS = 1.8V) Ron = 101 m (max) (@VGS = 2.5V) Ron = 85 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rat

SSM6K407TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K407TU Unit: mm DC-DC Converter, Relay Drive and Motor Drive Applications 2.10.11.70.11 6 4V drive Low ON-resistance :Ron = 440m (max) (@VGS = 4 V) 2 5:Ron = 300m (max) (@VGS = 10 V) 3 4Absolute Maximum Ratings (Ta = 25) (Note) 1,2,5,6 : Drain Characteristic Symbol Rating U

SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM6K211FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: Ron = 118 m (max) (@VGS = 1.5 V) Ron = 82 m (max) (@VGS = 1.8 V) Ron = 59 m (max) (@VGS = 2.5 V) Ron = 47 m (max) (@VGS = 4.5 V) Absolute Maximum

SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K25FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 395m (max) (@VGS = 1.8 V) 1.20.05Ron = 190m (max) (@VGS = 2.5 V) Ron = 145m (max) (@VGS = 4.0 V) 1 65Maximum Ratings (Ta = 25C) 24