Справочник MOSFET. SSM6K211FE

 

SSM6K211FE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM6K211FE
   Маркировка: NQ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 10.8 nC
   Cossⓘ - Выходная емкость: 98 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.047 Ohm
   Тип корпуса: SOT563 ES6

 Аналог (замена) для SSM6K211FE

 

 

SSM6K211FE Datasheet (PDF)

 ..1. Size:197K  toshiba
 ssm6k211fe.pdf

SSM6K211FE SSM6K211FE

SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM6K211FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: Ron = 118 m (max) (@VGS = 1.5 V) Ron = 82 m (max) (@VGS = 1.8 V) Ron = 59 m (max) (@VGS = 2.5 V) Ron = 47 m (max) (@VGS = 4.5 V) Absolute Maximum

 7.1. Size:202K  toshiba
 ssm6k210fe.pdf

SSM6K211FE SSM6K211FE

SSM6K210FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K210FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 4.0-V drive Low ON-resistance: Ron = 371 m (max) (@VGS = 4.0 V), Ron = 228 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS

 7.2. Size:213K  toshiba
 ssm6k217fe.pdf

SSM6K211FE SSM6K211FE

SSM6K217FEMOSFETs Silicon N-Channel MOSSSM6K217FESSM6K217FESSM6K217FESSM6K217FE1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 155 m (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) =

 8.1. Size:198K  toshiba
 ssm6k203fe.pdf

SSM6K211FE SSM6K211FE

SSM6K203FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K203FE High-Speed Switching Applications Unit: mm Power Management Switch Applications 1.5 V drive Low ON-resistance: Ron = 153 m (max) (@VGS = 1.5V) Ron = 106 m (max) (@VGS = 1.8V) Ron = 76 m (max) (@VGS = 2.5V) Ron = 61 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta

 8.2. Size:197K  toshiba
 ssm6k204fe.pdf

SSM6K211FE SSM6K211FE

SSM6K204FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K204FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: Ron = 307 m (max) (@VGS = 1.5V) Ron = 214 m (max) (@VGS = 1.8V) Ron = 164 m (max) (@VGS = 2.5V) Ron = 126 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta

 8.3. Size:278K  toshiba
 ssm6k22fe.pdf

SSM6K211FE SSM6K211FE

SSM6K22FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM6K22FE High Current Switching Applications Unit: mmDC-DC Converter Suitable for high-density mounting due to compact package Low on resistance: Ron = 170 m (max) (@VGS = 4.0 V) Ron = 230 m (max) (@VGS = 2.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain

 8.4. Size:153K  toshiba
 ssm6k24fe.pdf

SSM6K211FE SSM6K211FE

SSM6K24FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K24FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 145m (max) (@VGS = 4.5 V) 1.20.05Ron = 180m (max) (@VGS = 2.5 V) 1 6Maximum Ratings (Ta = 25C) 52Characteristics Symbol Rating Unit4

 8.5. Size:189K  toshiba
 ssm6k208fe.pdf

SSM6K211FE SSM6K211FE

SSM6K208FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K208FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.8V drive Low ON-resistance: Ron = 296m (max) (@VGS = 1.8 V) Ron = 177m (max) (@VGS = 2.5 V) Ron = 133m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rati

 8.6. Size:244K  toshiba
 ssm6k202fe.pdf

SSM6K211FE SSM6K211FE

SSM6K202FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K202FE Unit: mm High-Speed Switching Applications Power Management Switch Applications 1.8 V drive Low ON-resistance: Ron = 145 m (max) (@VGS = 1.8V) Ron = 101 m (max) (@VGS = 2.5V) Ron = 85 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rat

 8.7. Size:154K  toshiba
 ssm6k25fe.pdf

SSM6K211FE SSM6K211FE

SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K25FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 395m (max) (@VGS = 1.8 V) 1.20.05Ron = 190m (max) (@VGS = 2.5 V) Ron = 145m (max) (@VGS = 4.0 V) 1 65Maximum Ratings (Ta = 25C) 24

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