SSM6K405TU - параметры транзистора MOSFET, его аналоги, datasheet

SSM6K405TU Datasheet (PDF)

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SSM6K405TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K405TU High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: Ron = 307 m (max) (@VGS = 1.5V) 2.10.1Ron = 214 m (max) (@VGS = 1.8V) 1.70.1Ron = 164 m (max) (@VGS = 2.5V) Ron = 126 m (max) (@VGS = 4.0V) 1 6Abso

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SSM6K406TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K406TU High-Speed Switching Applications 4.5-V drive Unit: mm Low ON-resistance: Ron = 38.5 m (max) (@VGS = 4.5 V) 2.10.1 Ron = 25.0 m (max) (@VGS = 10 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1 6Characteristics Symbol Rating Unit2 5Drainsource voltage VDSS 30 V3 4

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SSM6K403TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS SSM6K403TU Power Management Switch Applications UNIT: mm High-Speed Switching Applications 2.10.11.70.11 6 1.5V drive Low ON-resistance:Ron = 66m (max) (@VGS = 1.5V) 2 5Ron = 43m (max) (@VGS = 1.8V) 3 4Ron = 32m (max) (@VGS = 2.5V) Ron = 28m (max) (@VGS = 4.0V) Absolute

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SSM6K404TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K404TU High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 147 m (max) (@VGS = 1.5 V) 2.10.1RDS(ON) = 100 m (max) (@VGS = 1.8 V) 1.70.1RDS(ON) = 70 m (max) (@VGS = 2.5 V) RDS(ON) = 55 m (max) (@VGS =