BUK203-50Y
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK203-50Y
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 4
A
Tjⓘ - Максимальная температура канала: 150
°C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.22
Ohm
Тип корпуса: SOT26301
- подбор MOSFET транзистора по параметрам
BUK203-50Y
Datasheet (PDF)
..1. Size:92K philips
buk203-50y 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK203-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 1.6 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPL
5.1. Size:91K philips
buk203-50x 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 1.6 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPL
9.1. Size:94K philips
buk206-50x 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK206-50X SMD version of BUK202-50X DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 9 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMET
9.2. Size:93K philips
buk202-50y 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK202-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 9 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPLIC
9.3. Size:94K philips
buk207-50y 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK207-50Y SMD version of BUK203-50Y DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 1.6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAM
9.4. Size:97K philips
buk205-50x 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK205-50X SMD version of BUK201-50X DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMET
9.5. Size:99K philips
buk204-50y 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK204-50Y SMD version of BUK200-50Y DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 3.5 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAM
9.6. Size:95K philips
buk201-50x 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK201-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPLIC
9.7. Size:96K philips
buk200-50x 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK200-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 3.5 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPL
9.8. Size:93K philips
buk202-50x 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK202-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 9 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPLIC
9.9. Size:97K philips
buk200-50y 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 3.5 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPL
9.10. Size:96K philips
buk201-50y 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK201-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPLIC
9.11. Size:98K philips
buk204-50x 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK204-50X SMD version of BUK200-50X DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 3.5 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAM
9.12. Size:98K philips
buk205-50y 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK205-50Y SMD version of BUK201-50Y DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMET
9.13. Size:95K philips
buk206-50y 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK206-50Y SMD version of BUK202-50Y DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 9 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMET
9.14. Size:93K philips
buk207-50x 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK207-50X SMD version of BUK203-50X DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 1.6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAM
Другие MOSFET... BUK111-50GL
, BUK112-50GL
, BUK114-50L
, BUK114-50S
, BUK116-50L
, BUK116-50S
, BUK200-50X
, BUK203-50X
, 5N65
, BUK204-50Y
, BUK207-50X
, BUK207-50Y
, BUK426-1000A
, BUK426-1000B
, BUK436W-1000B
, BUK436W-200A
, BUK436W-200B
.
History: IXFH12N120
| OSG60R108KSZF
| STU6N62K3
| SI1402DH
| 2N4338
| PHW14N50E
| AP2312
